公开(公告)号：US20180337307A1

公开(公告)日：2018-11-22

申请号：US15842000

申请日：2017-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Taek HAN ,  Jong Sun MAENG ,  Jeen Seok CHO ,  Sun Woon KIM ,  Yong Hee JEONG

IPC: H01L33/32 ,  H01L33/12

Abstract: A semiconductor light emitting device includes a Group-III nitride semiconductor layer on a buffer layer. The buffer layer includes a first layer, a second layer, and a third layer in that order. Each of the first layer, the second layer, and the third layer includes a composition which includes aluminum (Al), nitrogen (N), and oxygen (O). A minimum or average value of an oxygen concentration (atoms/cm3) of each of the first layer and the third layer is greater than an oxygen concentration (atoms/cm3) of the second layer.