公开(公告)号：US20180337307A1

公开(公告)日：2018-11-22

申请号：US15842000

申请日：2017-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Taek HAN ,  Jong Sun MAENG ,  Jeen Seok CHO ,  Sun Woon KIM ,  Yong Hee JEONG

IPC: H01L33/32 ,  H01L33/12

Abstract: A semiconductor light emitting device includes a Group-III nitride semiconductor layer on a buffer layer. The buffer layer includes a first layer, a second layer, and a third layer in that order. Each of the first layer, the second layer, and the third layer includes a composition which includes aluminum (Al), nitrogen (N), and oxygen (O). A minimum or average value of an oxygen concentration (atoms/cm3) of each of the first layer and the third layer is greater than an oxygen concentration (atoms/cm3) of the second layer.

公开(公告)号：US20150037920A1

公开(公告)日：2015-02-05

申请号：US14518948

申请日：2014-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Sun MAENG ,  Young Sun KIM ,  Hyun Wook SHIM ,  Sung Tae KIM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

Abstract translation: 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

公开(公告)号：US20160056325A1

公开(公告)日：2016-02-25

申请号：US14676750

申请日：2015-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Sun MAENG ,  Jun Youn KIM ,  Sung Min CHOI ,  Kyung Ho YOO

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/24 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/325 ,  H01L33/06 ,  H01L33/145

Abstract: A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlxGa1-xN, where 0

Abstract translation: 半导体发光器件包括：n型半导体层和p型半导体层; 设置在n型半导体层和p型半导体层之间的有源层; 以及设置在有源层和p型半导体层之间并掺杂有p型掺杂元素的电子阻挡层。 电子阻挡层由Al x Ga 1-x N形成，其中0