公开(公告)号：US20170125256A1

公开(公告)日：2017-05-04

申请号：US15215152

申请日：2016-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-soo LEE ,  Hong-rae KIM ,  Jeon-il LEE

IPC: H01L21/308 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/3081 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/3086 ,  H01L29/6656 ,  H01L29/66795

Abstract: Methods of forming patterns for semiconductor devices are provided. A method may include preparing a substrate including an etch target layer on a surface of the substrate; forming a mask pattern that includes a lower masking layer having a first density and an upper masking layer having a second density that is less than the first density, on the etch target layer; forming spacers that cover sidewalls of the lower masking layer and the upper masking layer; removing the mask pattern; and etching the etch target layer by using the spacers as an etching mask.