公开(公告)号：US20230231024A1

公开(公告)日：2023-07-20

申请号：US17982634

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong Sik SHIN ,  Jeong Yeon SEO ,  Sung Woo KANG ,  Dong Kwon KIM

IPC: H01L29/417 ,  H01L29/78

CPC classification number: H01L29/41791 ,  H01L29/7851

Abstract: The semiconductor device including an active pattern on a substrate and extending in a first direction, a gate structure on the active pattern, including a gate electrode extending in a second direction different from the first direction, a source/drain pattern on at least one side of the gate structure, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern, wherein with respect to an upper surface of the active pattern, a height of an upper surface of the gate electrode is same as a height of an upper surface of the source/drain contact, and the source/drain contact comprises a lower source/drain contact and an upper source/drain contact on the lower source/drain contact, may be provided.