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    IMAGE SENSOR
    1.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240128287A1

    公开(公告)日：2024-04-18

    申请号：US18374343

    申请日：2023-09-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sanghyuck Moon ,  Jueun Park ,  Hyuncheol Kim ,  Jungbin Yun ,  Seungjoon Lee ,  Taesub Jung

    IPC: H01L27/146

    CPC classification number: H01L27/1461 ,  H01L27/14645 ,  H01L27/14689

    Abstract: An image sensor including a substrate, at least one transfer gate on a top surface of the substrate, a floating diffusion region located in the substrate and disposed apart from the at least one transfer gate in a first direction, the first direction being parallel to the top surface of the substrate, an intrinsic semiconductor region located in the substrate and disposed between the at least one transfer gate and the floating diffusion region in the first direction, and a photoelectric conversion region located in the substrate and disposed apart from the floating diffusion region in a second direction, wherein the second direction is perpendicular to the first direction, and wherein the intrinsic semiconductor region is an undoped region.

    Image sensors
    2.
    发明授权
    Image sensors 有权

    公开(公告)号：US11490039B2

    公开(公告)日：2022-11-01

    申请号：US17470302

    申请日：2021-09-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jueun Park ,  Jungbin Yun ,  Kyungho Lee ,  Sanghyuck Moon ,  Hongsuk Lee

    IPC: H04N5/3745 ,  H04N5/369 ,  H04N5/353

    Abstract: An image sensor includes first conductive patterns on a first surface of a substrate, and second conductive patterns between the first conductive patterns and the first surface, in which at least one of the first conductive patterns or the second conductive patterns includes a time constant adjustment pattern and neighboring conductive patterns, in which the time constant adjustment pattern extends in a first direction that is parallel to the first surface and the neighboring conductive patterns extend in the first direction and are most adjacent to the time constant adjustment pattern. The time constant adjustment pattern includes one or more time constant adjustment portions that protrude in a second direction that is parallel to the first surface and is perpendicular to the first direction, and the one or more time constant adjustment portions do not overlap the neighboring conductive patterns in the second direction.

    Image sensors including pixel groups and electronic devices including image sensors
    3.
    发明授权
    Image sensors including pixel groups and electronic devices including image sensors 有权

    公开(公告)号：US11044427B2

    公开(公告)日：2021-06-22

    申请号：US16841796

    申请日：2020-04-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Seyoung Kim ,  Sanghyuck Moon

    IPC: H04N5/355

    Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

    IMAGE SENSORS INCLUDING PIXEL GROUPS AND ELECTRONIC DEVICES INCLUDING IMAGE SENSORS
    4.
    发明申请
    IMAGE SENSORS INCLUDING PIXEL GROUPS AND ELECTRONIC DEVICES INCLUDING IMAGE SENSORS 审中-公开

    公开(公告)号：US20200322553A1

    公开(公告)日：2020-10-08

    申请号：US16841796

    申请日：2020-04-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Seyoung Kim ,  Sanghyuck Moon

    IPC: H04N5/355

    Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

    IMAGE SENSORS
    7.
    发明公开
    IMAGE SENSORS 审中-公开

    公开(公告)号：US20240120351A1

    公开(公告)日：2024-04-11

    申请号：US18302828

    申请日：2023-04-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngrae Kim ,  Sanghyuck Moon ,  Jueun Park ,  Jaeho Lee ,  Jeongjin Cho

    IPC: H01L27/146

    CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463

    Abstract: An image sensor includes a substrate and a pixel separation portion disposed in the substrate and separating first pixels and second pixels from each other. The first pixels and the second pixels are alternately arranged in a first direction and a second direction which intersect each other. Each of the first pixels has a first width in the first direction. Each of the second pixels has a second width in the first direction, which is narrower than the first width. The pixel separation portion includes a main separation portion between the first and second pixels, and protrusions, each of which protrudes from a side surface of the main separation portion in at least one of the first and second directions. Ones of the protrusions protrude into a respective one of the first pixels to divide the respective one of the first pixels into a plurality of sub-pixels.

    Image sensors including pixel groups and electronic devices including image sensors
    8.
    发明授权
    Image sensors including pixel groups and electronic devices including image sensors 有权

    公开(公告)号：US11265489B2

    公开(公告)日：2022-03-01

    申请号：US17326587

    申请日：2021-05-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Seyoung Kim ,  Sanghyuck Moon

    IPC: H04N5/355

    Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

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