公开(公告)号：US20230352547A1

公开(公告)日：2023-11-02

申请号：US18107793

申请日：2023-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongsik Shin ,  Sungwoo Kang ,  Dongkwon Kim ,  Hyonwook Ra ,  Jeongyeon Seo ,  Kyungyub Jeon

IPC: H01L29/06 ,  H01L29/417 ,  H01L27/088 ,  H01L29/775 ,  H01L29/423

CPC classification number: H01L29/41775 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes first and second gate structures, first and second contact plug structures and a first wiring on a substrate. The first and second source/drain layers are formed on portions of the substrate adjacent to the first and second gate structures, respectively. The first and second contact plug structures are formed on the first and second source/drain layers, respectively. The first wiring contacts an upper surface of the first gate structure. The first gate structure includes a first gate electrode and a first gate insulation pattern on a lower surface and a sidewall of the first gate electrode. The second gate structure includes a second gate electrode and a second gate insulation pattern on a lower surface and a sidewall of the second gate electrode. The upper surface of the second gate electrode is lower than an upper surface of the first gate electrode.

公开(公告)号：US20240243064A1

公开(公告)日：2024-07-18

申请号：US18453546

申请日：2023-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyeon Seo ,  Sungwoo Kang ,  Hyonwook Ra ,  Hongsik Shin

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L23/5286 ,  H01L23/5226 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

Abstract: An integrated circuit device includes a fin-type active region that extends from a substrate and in a first lateral direction, a device isolation film on a trench region on the substrate, an insulating liner structure that extends through the substrate in a vertical direction and contacts the device isolation film at a first vertical level, a via power rail that extends through the device isolation film in the vertical direction and comprising a first bottom surface at a second vertical level, and a backside power rail comprising a main rail and a protrusion rail, where the main rail extends through the substrate and the insulating liner structure in the vertical direction, and where the protrusion rail extends from the main rail toward the via power rail.