公开(公告)号：US11198815B2

公开(公告)日：2021-12-14

申请号：US16983332

申请日：2020-08-03

申请人： Samsung Electronics Co., Ltd.

发明人： Soo Jin Kim ,  Hyo Sun Lee ,  Jin Hye Bae ,  Jung Hun Lim ,  Yong Jae Choi

IPC分类号： C09K13/08 ,  H01L21/306 ,  H01L21/3213 ,  B82Y10/00 ,  C09K13/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

摘要： An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).

公开(公告)号：US10414978B2

公开(公告)日：2019-09-17

申请号：US15804422

申请日：2017-11-06

申请人： Samsung Electronics Co., Ltd.

发明人： Soo Jin Kim ,  Hyo Sun Lee ,  Jin Hye Bae ,  Jung Hun Lim ,  Yong Jae Choi

IPC分类号： C09K13/08 ,  H01L21/306 ,  H01L21/3213 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/06 ,  C09K13/00

摘要： An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).

公开(公告)号：US10793775B2

公开(公告)日：2020-10-06

申请号：US16543999

申请日：2019-08-19

申请人： Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

发明人： Soo Jin Kim ,  Hyo Sun Lee ,  Jin Hye Bae ,  Jung Hun Lim ,  Yong Jae Choi

IPC分类号： C09K13/08 ,  H01L21/306 ,  H01L21/3213 ,  B82Y10/00 ,  C09K13/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

摘要： An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).