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公开(公告)号：US10800972B2
公开(公告)日：2020-10-13
申请号：US16511291
申请日：2019-07-15
发明人： Hyo Sun Lee , Ho Young Kim , Sang Won Bae , Min Goo Kim , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/06 , C09K13/04 , C09K13/10 , H01L21/311 , H01L21/3213
摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).
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公开(公告)号：US10793775B2
公开(公告)日：2020-10-06
申请号：US16543999
申请日：2019-08-19
发明人： Soo Jin Kim , Hyo Sun Lee , Jin Hye Bae , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/08 , H01L21/306 , H01L21/3213 , B82Y10/00 , C09K13/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/78 , H01L29/786
摘要： An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
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公开(公告)号：US10414978B2
公开(公告)日：2019-09-17
申请号：US15804422
申请日：2017-11-06
发明人： Soo Jin Kim , Hyo Sun Lee , Jin Hye Bae , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/08 , H01L21/306 , H01L21/3213 , H01L29/423 , H01L29/66 , H01L29/78 , H01L29/775 , B82Y10/00 , H01L29/06 , C09K13/00
摘要： An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
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公开(公告)号：US10377948B2
公开(公告)日：2019-08-13
申请号：US15809597
申请日：2017-11-10
发明人： Hyo Sun Lee , Ho Young Kim , Sang Won Bae , Min Goo Kim , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/04 , C09K13/06 , C09K13/10 , H01L21/311 , H01L21/3213
摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).
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公开(公告)号：US11198815B2
公开(公告)日：2021-12-14
申请号：US16983332
申请日：2020-08-03
发明人： Soo Jin Kim , Hyo Sun Lee , Jin Hye Bae , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/08 , H01L21/306 , H01L21/3213 , B82Y10/00 , C09K13/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/78 , H01L29/786
摘要： An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
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公开(公告)号：US20190338186A1
公开(公告)日：2019-11-07
申请号：US16511291
申请日：2019-07-15
发明人： Hyo Sun Lee , Ho Young Kim , Sang Won Bae , Min Goo Kim , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/06 , H01L21/3213 , C09K13/04 , C09K13/10 , H01L21/311
摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).
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