公开(公告)号：US09608117B2

公开(公告)日：2017-03-28

申请号：US15049859

申请日：2016-02-22

申请人： Samsung Electronics Co., Ltd.

发明人： Jin-Bum Kim ,  Nam Kyu Kim ,  Hyun-Ho Noh ,  Dong-Chan Suh ,  Byeong-Chan Lee ,  Su-Jin Jung ,  Jin-Yeong Joe ,  Bon-Young Koo

IPC分类号： H01L29/76 ,  H01L29/78 ,  H01L29/16 ,  H01L29/06

CPC分类号： H01L29/785 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7856

摘要： A semiconductor device includes an active fin structure extending in a first direction, the active fin structure including protruding portions divided by a recess, a plurality of gate structures extending in a second direction crossing the first direction and covering the protruding portions of the active fin structure, a first epitaxial pattern in a lower portion of the recess between the gate structures, a second epitaxial pattern on a portion of the first epitaxial pattern, the second epitaxial pattern contacting a sidewall of the recess, and a third epitaxial pattern on the first and second epitaxial patterns, the third epitaxial pattern filling the recess. The first epitaxial pattern includes a first impurity region having a first doping concentration, the second epitaxial pattern includes a second impurity region having a second doping concentration lower than the a first doping concentration, and the third epitaxial pattern includes a third impurity region having a third doping concentration higher than the second doping concentration. The semiconductor device may have good electrical characteristics.