公开(公告)号：US20200027437A1

公开(公告)日：2020-01-23

申请号：US16503990

申请日：2019-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho PARK ,  Guiwon SEO ,  Jonghwa LEE ,  Hyeongcheol JEONG ,  Sungwon CHO

IPC: G10K11/178

Abstract: A method and audio apparatus for processing an audio signal are provided. The audio apparatus includes at least one microphone to acquire ambient sound of the audio apparatus, a speaker to output the audio signal, an air pressure regulator including a fluid tube connecting an external space of a housing of the audio apparatus to an internal space of the housing, and configured to adjust a change in an air pressure of the internal space of the housing and an audio signal processor configured to generate an anti-noise signal for canceling noise in the ambient sound by using the acquired ambient sound and output the generated anti-noise signal and the audio signal through the speaker.

公开(公告)号：US20210399010A1

公开(公告)日：2021-12-23

申请号：US17204010

申请日：2021-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhyoung KIM ,  Youngjin KWON ,  Jeongeun KIM ,  Byunggon PARK ,  Sungwon CHO

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11548 ,  H01L27/11595 ,  H01L23/528

Abstract: A memory device includes a lower structure, a stacked structure on the lower structure, the stacked structure including horizontal layers and interlayer insulating layers alternately stacked in a vertical direction, and each of the horizontal layers including a gate electrode, a vertical structure penetrating through the stacked structure in the vertical direction, the vertical structure having a core region, a pad pattern with a pad metal pattern on the core region, a dielectric structure including a first portion facing a side surface of the core region, a second portion facing at least a portion of a side surface of the pad metal pattern, and a data storage layer, and a channel layer between the dielectric structure and the core region, a contact structure on the vertical structure, and a conductive line on the contact structure.

公开(公告)号：US20210043568A1

公开(公告)日：2021-02-11

申请号：US16876600

申请日：2020-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung HYUN ,  Dongug KO ,  Joohee PARK ,  Juhak SONG ,  Jongseon AHN ,  Sungwon CHO

IPC: H01L23/535 ,  H01L27/11556 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: A vertical semiconductor device may include may include a substrate, a stacked structure, an insulating interlayer, a buffer pattern and a first contact plug. The stacked structure may include insulation patterns and conductive patterns stacked on each other on the substrate. The conductive patterns may extend in a first direction parallel to an upper surface of the substrate, and edges of the conductive patterns may have a staircase shape. The conductive patterns may include pad patterns defined by exposed upper surfaces of the conductive patterns. The insulating interlayer may cover the stacked structure. The buffer pattern may be on the insulating interlayer. The first contact plug may pass through the buffer pattern and the insulating interlayer. The first contact plug may contact one of the pad patterns. The buffer pattern may reduce defects from forming the first contact plug.

公开(公告)号：US20250014871A1

公开(公告)日：2025-01-09

申请号：US18406898

申请日：2024-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungwon CHO ,  Kyunghyun KIM ,  Ingi KIM ,  Sangki NAM ,  Dougyong SUNG ,  Sejin OH ,  Sungho JANG

IPC: H01J37/32 ,  H01L21/683

Abstract: According to an aspect of the present inventive concepts, a semiconductor processing apparatus includes: a chamber; an electrostatic chuck in an internal space of the chamber; a plurality of grid electrodes installed on the electrostatic chuck so as to be separated from each other in a first direction, perpendicular to an upper surface of the electrostatic chuck, and respectively having a plurality of through-holes; a plurality of reflectors between the plurality of grid electrodes and the electrostatic chuck and reflecting ions passing through the plurality of through-holes in each of the plurality of grid electrodes; and a voltage supply unit outputting a bias voltage having a predetermined cycle to at least one of the plurality of grid electrodes, wherein each of the plurality of grid electrodes includes a base plate containing a conductive material, and a cover layer covering a surface of the base plate and containing a metal oxide.