Patent search ap:("Samsung Electronics Co. Page Ltd.") AND inv:"Jinho Ryu"

1.

发明授权
Nonvolatile memory devices with on die termination circuits and control methods thereof 有权

公开(公告)号：US10171078B2

公开(公告)日：2019-01-01

申请号：US14882714

申请日：2015-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Bum Kim , Sangchul Kang , Jinho Ryu , Seokcheon Kwon

IPC: G11C5/06 , G11C7/10 , H03K19/00

Abstract: Non-volatile memory devices including on-die termination circuits connected to an input/output circuit and an on-die termination control logic detecting a preamble of a strobe signal based on a command and a control signal and activating the on-die termination within the preamble period.

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