公开(公告)号：US09036431B2

公开(公告)日：2015-05-19

申请号：US14458800

申请日：2014-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

CPC classification number: G11C7/222 ,  G11C7/10 ,  G11C8/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

Abstract translation: 一种在非易失性存储器件上执行读取操作的方法包括接收读取命令，接收地址，检测读取使能信号的转换，基于读取使能信号的转换产生选通信号，读取对应于所接收的地址的数据 并且在选通信号切换预定次数之后输出读取的数据。

公开(公告)号：USRE49145E1

公开(公告)日：2022-07-19

申请号：US16916750

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C16/08 ,  G11C8/10 ,  G11C7/22 ,  G11C7/10 ,  G11C16/10 ,  G11C16/32

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

公开(公告)号：USRE48431E1

公开(公告)日：2021-02-09

申请号：US16881822

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22 ,  G11C8/10 ,  G11C16/10 ,  G11C16/32 ,  G11C16/08 ,  G11C7/10

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

公开(公告)号：USRE48013E1

公开(公告)日：2020-05-26

申请号：US15946985

申请日：2018-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22 ,  G11C16/08 ,  G11C7/10 ,  G11C16/32 ,  G11C16/10 ,  G11C8/10

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

公开(公告)号：US10171078B2

公开(公告)日：2019-01-01

申请号：US14882714

申请日：2015-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Bum Kim ,  Sangchul Kang ,  Jinho Ryu ,  Seokcheon Kwon

IPC: G11C5/06 ,  G11C7/10 ,  H03K19/00

Abstract: Non-volatile memory devices including on-die termination circuits connected to an input/output circuit and an on-die termination control logic detecting a preamble of a strobe signal based on a command and a control signal and activating the on-die termination within the preamble period.

公开(公告)号：US09318172B2

公开(公告)日：2016-04-19

申请号：US14695971

申请日：2015-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32 ,  G11C7/10 ,  G11C8/10

CPC classification number: G11C7/222 ,  G11C7/10 ,  G11C8/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

公开(公告)号：US20140347942A1

公开(公告)日：2014-11-27

申请号：US14458800

申请日：2014-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22

CPC classification number: G11C7/222 ,  G11C7/10 ,  G11C8/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

Abstract translation: 一种在非易失性存储器件上执行读取操作的方法包括接收读取命令，接收地址，检测读取使能信号的转换，基于读取使能信号的转换产生选通信号，读取对应于所接收的地址的数据 并且在选通信号切换预定次数之后输出读取的数据。