公开(公告)号：US11915773B2

公开(公告)日：2024-02-27

申请号：US17693571

申请日：2022-03-14

申请人： Samsung Electronics Co., Ltd.

发明人： Kyunghae Lee ,  Buil Nam ,  Jinsun Yeom ,  Sangwan Nam ,  Jaein Lee

IPC分类号： G11C16/30 ,  G11C16/04 ,  G11C16/08 ,  G11C29/12 ,  G11C29/38

CPC分类号： G11C29/38 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/30 ,  G11C29/12005

摘要： A nonvolatile memory device includes a memory cell array, a voltage generator, a voltage path circuit and a wordline defect detection circuit. The memory cell array includes memory cells and wordlines connected to the memory cells. The voltage generator generates a wordline voltage applied to the wordlines. The voltage path circuit between the voltage generator and the memory cell array transfers the wordline voltage to the wordlines. The wordline defect detection circuit is connected to a measurement node between the voltage generator and the voltage path circuit. The wordline defect detection circuit measures a path leakage current of the voltage path circuit based on a measurement voltage of the measurement node to generate an offset value corresponding to the path leakage current in a compensation mode and determines defect of each wordline of the wordlines based on the offset value and the measurement voltage in a defect detection mode.