公开(公告)号：US10176881B2

公开(公告)日：2019-01-08

申请号：US15462381

申请日：2017-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jisuk Kim ,  Il Han Park ,  Se Hwan Park

IPC: G11C16/34 ,  G11C7/04 ,  G11C16/16 ,  G11C16/26 ,  G11C16/04 ,  G11C16/08

Abstract: A non-volatile memory device includes: a memory cell array including a memory cell string including a ground selection transistor and a plurality of serially connected non-volatile memory cells; a ground selection line connected to the ground selection transistor and a plurality of word lines connected to the plurality of memory cells; a voltage generator configured to generate a program verification voltage and a read voltage applied to the plurality of word lines; and a control circuit configured to control a compensation for the program verification voltage based on a program verification temperature offset, and control a to compensation for the read voltage based on a read temperature offset.

公开(公告)号：US20180061504A1

公开(公告)日：2018-03-01

申请号：US15462381

申请日：2017-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jisuk Kim ,  IL Han Park ,  Se Hwan Park

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/26 ,  G11C16/16

CPC classification number: G11C16/3459 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/26

Abstract: A non-volatile memory device includes: a memory cell array including a memory cell string including a ground selection transistor and a plurality of serially connected non-volatile memory cells; a ground selection line connected to the ground selection transistor and a plurality of word lines connected to the plurality of memory cells; a voltage generator configured to generate a program verification voltage and a read voltage applied to the plurality of word lines; and a control circuit configured to control a compensation for the program verification voltage based on a program verification temperature offset, and control a to compensation for the read voltage based on a read temperature offset.