公开(公告)号：US20170345822A1

公开(公告)日：2017-11-30

申请号：US15676317

申请日：2017-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kee Sang Kwon ,  Boun YOON ,  Sangjine PARK ,  Myunggeun SONG ,  Ki-Hyung KO ,  Jiwon YUN

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49

Abstract: Semiconductor devices may include a substrate, gate electrodes on the substrate, and source/drain regions at both sides of each of the gate electrodes. Each of the gate electrodes may include a gate insulating pattern on the substrate, a lower work-function electrode pattern that is on the gate insulating pattern and has a recessed upper surface, and an upper work-function electrode pattern that conformally extends on the recessed upper surface of the lower work function electrode pattern. Topmost surfaces of the lower work-function electrode patterns may be disposed at an equal level, and the upper work-function electrode patterns may have different thicknesses from each other.

公开(公告)号：US20230255017A1

公开(公告)日：2023-08-10

申请号：US18103596

申请日：2023-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Teawon KIM ,  Jiwon YUN ,  Yurim KIM ,  Junghan LEE ,  Yongsuk TAK

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/482 ,  H10B12/05 ,  H10B12/0335

Abstract: A semiconductor apparatus includes a bit line extending in a first horizontal direction on a substrate; a channel layer on the bit line, the channel layer extending in a vertical direction, including a first oxide semiconductor material that includes indium, and having a first side wall and a second side wall; a word line on the first side wall of the channel layer; a contact forming region on a top surface and an upper portion of the second side wall of the channel layer, the contact forming region including a second oxide semiconductor material that includes indium and having a resistivity lower than a resistivity of the channel layer; a contact layer on the contact forming region; and a capacitor structure on a top surface of the contact layer.