公开(公告)号：US20230268412A1

公开(公告)日：2023-08-24

申请号：US18049036

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakchul Jung ,  Garoom Kim ,  Ingyum Kim ,  Jiyun Han

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/786 ,  H01L23/528 ,  H01L29/778

CPC classification number: H01L29/42392 ,  H01L29/7851 ,  H01L29/0673 ,  H01L29/78696 ,  H01L23/5283 ,  H01L29/778

Abstract: A semiconductor device includes a substrate including a first device region and a second device region, a first active pattern on the first device region, a second active pattern, which has a width smaller than the first active pattern, on the second device region, a first channel pattern on the first active pattern, a first source/drain pattern connected to the first channel pattern, a second channel pattern on the second active pattern, a second source/drain pattern connected to the second channel pattern, and a gate electrode that extends from the first channel pattern to the second channel pattern in a first direction. The first channel pattern includes a plurality of semiconductor patterns, which are vertically stacked and spaced apart from each other. The second channel pattern protrudes vertically from the second active pattern.