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公开(公告)号：US20230396241A1
公开(公告)日：2023-12-07
申请号：US18085185
申请日：2022-12-20
发明人： Garoom Kim , JAE-WOO SEO
IPC分类号： H03K3/037 , H03K3/3562 , H03K3/012
CPC分类号： H03K3/0372 , H03K3/35625 , H03K3/012
摘要： Disclosed is a semiconductor device which includes at least one flip-flop. The flip-flop includes a first latch that includes a first data path receiving input data in response to a transmission signal and outputting middle data, and a first feedback path feeding back the middle data, and a second latch that includes a second data path receiving the middle data in response to the transmission signal and outputting output data, and a second feedback path feeding back the output data, and at least one of the first feedback path and the second feedback path is disabled prior to the first data path or the second data path.
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公开(公告)号：US20230268412A1
公开(公告)日：2023-08-24
申请号：US18049036
申请日：2022-10-24
发明人： Hakchul Jung , Garoom Kim , Ingyum Kim , Jiyun Han
IPC分类号： H01L29/423 , H01L29/78 , H01L29/06 , H01L29/786 , H01L23/528 , H01L29/778
CPC分类号： H01L29/42392 , H01L29/7851 , H01L29/0673 , H01L29/78696 , H01L23/5283 , H01L29/778
摘要： A semiconductor device includes a substrate including a first device region and a second device region, a first active pattern on the first device region, a second active pattern, which has a width smaller than the first active pattern, on the second device region, a first channel pattern on the first active pattern, a first source/drain pattern connected to the first channel pattern, a second channel pattern on the second active pattern, a second source/drain pattern connected to the second channel pattern, and a gate electrode that extends from the first channel pattern to the second channel pattern in a first direction. The first channel pattern includes a plurality of semiconductor patterns, which are vertically stacked and spaced apart from each other. The second channel pattern protrudes vertically from the second active pattern.
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