公开(公告)号：US20130065381A1

公开(公告)日：2013-03-14

申请号：US13673396

申请日：2012-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Hoon Son ,  Jong- Wook Lee ,  Jong-Hyuk Kang

IPC: H01L21/20

CPC classification number: H01L27/11582 ,  H01L21/02524 ,  H01L21/02587 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/30604 ,  H01L21/32133 ,  H01L27/1052 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/1158 ,  H01L29/4234 ,  H01L29/45 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/66787 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

Abstract: In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.