公开(公告)号：US10892015B2

公开(公告)日：2021-01-12

申请号：US16822905

申请日：2020-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kang-Bin Lee ,  Il-Han Park ,  Jong-Hoo Jo

IPC: G11C16/10 ,  G11C16/04 ,  G11C16/26 ,  G11C16/34 ,  G11C16/08 ,  H01L27/11556 ,  H01L27/11582

Abstract: In a method of programming in a nonvolatile memory device, channels of a plurality of cell strings are precharged through ground selection transistors by a precharge voltage of a source line. A turn-on voltage is applied to a selected ground selection transistor of a selected cell string among the plurality of cell strings, during a verification read period of an N-th program loop. The turn-on voltage applied to the selected ground selection transistor is maintained to precharge the channels for an (N+1)-th program loop, without recovery after the verification read period of the N-th program loop is finished. Power consumption is reduced and an operation speed is increased by maintaining the turn-on voltage of the selected ground selection line to precharge the channels of the cell strings without recovery after the verification read operation is finished.

公开(公告)号：US20190318784A1

公开(公告)日：2019-10-17

申请号：US16213420

申请日：2018-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang-Bin Lee ,  Il-Han Park ,  Jong-Hoo Jo

IPC: G11C16/10 ,  G11C16/04 ,  G11C16/26 ,  G11C16/34

Abstract: In a method of programming in a nonvolatile memory device, channels of a plurality of cell strings are precharged through ground selection transistors by a precharge voltage of a source line. A turn-on voltage is applied to a selected ground selection transistor of a selected cell string among the plurality of cell strings, during a verification read period of an N-th program loop. The turn-on voltage applied to the selected ground selection transistor is maintained to precharge the channels for an (N+1)-th program loop, without recovery after the verification read period of the N-th program loop is finished. Power consumption is reduced and an operation speed is increased by maintaining the turn-on voltage of the selected ground selection line to precharge the channels of the cell strings without recovery after the verification read operation is finished.