公开(公告)号：US10157674B2

公开(公告)日：2018-12-18

申请号：US15714155

申请日：2017-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-hyun Kim ,  Il-han Park ,  Jong-hoon Lee

IPC: G11C16/04 ,  G11C16/14 ,  G11C11/56 ,  G11C16/16 ,  G11C16/34

Abstract: A soft erase method of a memory device including applying a program voltage to a first memory cell in at least one of program loops when a plurality of program loops are performed to program the first memory cell into a Nth programming state, wherein the first memory cell is included in a selected memory cell string connected to a selected first bit line and is connected to a selected word line; and soft erasing a second memory cell by applying, in a first verification interval, a read voltage for verifying a programming state of the first memory cell to the selected word line and applying a first prepulse to a gate of a string select transistor of each of a plurality of unselected memory cell strings connected to the first bin line and a plurality of unselected memory cell strings connected to an unselected second bit line.