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    Image Sensors Including Conductive Pixel Separation Structures
    1.
    发明申请
    Image Sensors Including Conductive Pixel Separation Structures 有权
    包括导电像素分离结构的图像传感器

    公开(公告)号：US20140246707A1

    公开(公告)日：2014-09-04

    申请号：US14191670

    申请日：2014-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

    IPC: H01L27/148

    CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

    Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

    Abstract translation: 图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。 沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。 导电互连耦合到公共偏置线，并且被配置为向其提供负电压。 还讨论了相关的制造方法。

    IMAGE SENSORS INCLUDING CONDUCTIVE PIXEL SEPARATION STRUCTURES AND METHODS OF FABRICATING THE SAME
    6.
    发明申请
    IMAGE SENSORS INCLUDING CONDUCTIVE PIXEL SEPARATION STRUCTURES AND METHODS OF FABRICATING THE SAME 审中-公开
    包含导电像素分离结构的图像传感器及其制作方法

    公开(公告)号：US20170062513A1

    公开(公告)日：2017-03-02

    申请号：US15349227

    申请日：2016-11-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

    IPC: H01L27/146

    CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

    Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

    Abstract translation: 图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。 沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。 导电互连耦合到公共偏置线，并且被配置为向其提供负电压。 还讨论了相关的制造方法。

    Image sensors including conductive pixel separation structures
    9.
    发明授权
    Image sensors including conductive pixel separation structures 有权
    图像传感器包括导电像素分离结构

    公开(公告)号：US09524995B2

    公开(公告)日：2016-12-20

    申请号：US14191670

    申请日：2014-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

    IPC: H01L27/148 ,  H01L27/146

    CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

    Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

    Abstract translation: 图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。 沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。 导电互连耦合到公共偏置线，并且被配置为向其提供负电压。 还讨论了相关的制造方法。

    Image sensor and method of forming the same
    10.
    发明授权
    Image sensor and method of forming the same 有权
    图像传感器及其形成方法

    公开(公告)号：US09443892B2

    公开(公告)日：2016-09-13

    申请号：US14182829

    申请日：2014-02-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： June-mo Koo ,  Sang-Hoon Kim ,  Seung-Hun Shin ,  Jongcheol Shin

    IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

    CPC classification number: H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689

    Abstract: An image sensor includes a substrate having a first surface opposing a second surface and a plurality of pixel regions. A photoelectric converter is included in each of the pixel regions, and a gate electrode is formed on the photoelectric converter. Also, a pixel isolation region isolates adjacent pixel regions. The pixel isolation region includes a first isolation layer coupled to a channel stop region. The channel stop region may include an impurity-doped region.

    Abstract translation: 图像传感器包括具有与第二表面相对的第一表面和多个像素区域的基板。 在每个像素区域中包括光电转换器，并且在光电转换器上形成栅电极。 此外，像素隔离区隔离相邻像素区域。 像素隔离区域包括耦合到通道停止区域的第一隔离层。 通道停止区域可以包括杂质掺杂区域。

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