Abstract:
Provided is an image sensor including a substrate, in which a pixel area including a plurality of unit pixels, an optical black area located outside of the pixel area, and an alignment key area located outside of the pixel area are included, the substrate having a first surface and a second surface opposing the first surface, an interconnection structure below the first surface of the substrate, photoelectric conversion elements in the pixel area of the substrate, an insulating layer on the second surface of the substrate, a grid layer on the insulating layer in the pixel area and the alignment key area, a key pattern layer between the insulating layer disposed in the alignment key area and the grid layer disposed in the alignment key area, the key pattern layer including a protruding region to correspond to the grid layer, and color filters on the insulating layer and the grid layer in the pixel area.
Abstract:
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
Abstract:
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
Abstract:
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
Abstract:
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
Abstract:
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
Abstract:
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
Abstract:
Provided is an image sensor including a substrate, in which a pixel area including a plurality of unit pixels, an optical black area located outside of the pixel area, and an alignment key area located outside of the pixel area are included, the substrate having a first surface and a second surface opposing the first surface, an interconnection structure below the first surface of the substrate, photoelectric conversion elements in the pixel area of the substrate, an insulating layer on the second surface of the substrate, a grid layer on the insulating layer in the pixel area and the alignment key area, a key pattern layer between the insulating layer disposed in the alignment key area and the grid layer disposed in the alignment key area, the key pattern layer including a protruding region to correspond to the grid layer, and color filters on the insulating layer and the grid layer in the pixel area.
Abstract:
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.
Abstract:
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.