公开(公告)号：US20140080302A1

公开(公告)日：2014-03-20

申请号：US13966345

申请日：2013-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tsukasa MATSUDA ,  Jinnam KIM ,  Jongho YUN ,  Jongmyeong LEE

IPC: H01L21/768

CPC classification number: H01L21/76883 ,  H01L21/7682 ,  H01L21/76852 ,  H01L21/76885

Abstract: A method of manufacturing a semiconductor device including forming a first sacrificial layer on a substrate, the first sacrificial layer including a conductive material, forming a second sacrificial layer on the first sacrificial layer, the second sacrificial layer including an insulating material, patterning the second sacrificial layer and the first sacrificial layer to form an opening successively penetrating the second and first sacrificial layers, conformally forming a seed layer on the second and first sacrificial layers including the opening, and forming a conductive pattern filling the opening having the seed layer by a plating process.

Abstract translation: 一种制造半导体器件的方法，包括在衬底上形成第一牺牲层，所述第一牺牲层包括导电材料，在所述第一牺牲层上形成第二牺牲层，所述第二牺牲层包括绝缘材料，图案化所述第二牺牲层 层和第一牺牲层，以形成连续穿过第二和第一牺牲层的开口，在包括开口的第二和第一牺牲层上保形地形成晶种层，并且通过电镀形成填充具有晶种层的开口的导电图案 处理。