Methods of fabricating semiconductor devices

    公开(公告)号:US12211745B2

    公开(公告)日:2025-01-28

    申请号:US17558699

    申请日:2021-12-22

    Abstract: A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

    Apparatus and method for performing artificial intelligence (AI) encoding and AI decoding on image

    公开(公告)号:US11610341B2

    公开(公告)日:2023-03-21

    申请号:US17082442

    申请日:2020-10-28

    Abstract: An artificial intelligence (AI) decoding method including obtaining image data generated from performing first encoding on a first image and AI data related to AI down-scaling of at least one original image related to the first image; obtaining a second image corresponding to the first image by performing first decoding on the image data; obtaining, based on the AI data, deep neural network (DNN) setting information for performing AI up-scaling of the second image; and generating a third image by performing the AI up-scaling on the second image via an up-scaling DNN operating according to the obtained DNN setting information. The DNN setting information is DNN information updated for performing the AI up-scaling of at least one second image via joint training of the up-scaling DNN and a down-scaling DNN used for the AI down-scaling.

    METHODS OF FABRICATING SEMICONDUCTOR DEVICES

    公开(公告)号:US20220359282A1

    公开(公告)日:2022-11-10

    申请号:US17558699

    申请日:2021-12-22

    Abstract: A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

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