公开(公告)号：US20220157822A1

公开(公告)日：2022-05-19

申请号：US17392775

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiyoung AHN ,  Yongseok AHN ,  Hyunyong KIM ,  Minsub UM ,  Ju Hyung WE ,  Joonkyu RHEE ,  Yoonyoung CHOI

IPC: H01L27/108

Abstract: A semiconductor memory device includes a substrate including a device isolation pattern defining an active pattern extending in a first direction and including first and second source/drain regions, a word line extending in a second direction intersecting the first direction, a bit line that is on the word line and electrically connected to the first source/drain region and that extends in a third direction that intersects the first and second directions, a bit-line spacer on a sidewall of the bit line, a storage node contact electrically connected to the second source/drain region and spaced apart from the bit line across the bit-line spacer, and a dielectric pattern between the bit-line spacer and the storage node contact. The bit-line spacer includes a first spacer covering the sidewall of the bit line and a second spacer between the dielectric pattern and the first spacer.

公开(公告)号：US20220149048A1

公开(公告)日：2022-05-12

申请号：US17357139

申请日：2021-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonkyu RHEE ,  Jiyoung AHN ,  Hyunyong KIM ,  Jamin KOO ,  Yongseok AHN ,  Minsub UM ,  Sangho LEE ,  Yoonyoung CHOI

IPC: H01L27/108

Abstract: A semiconductor device includes an active pattern on a substrate, a gate structure buried at an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure covering a lower sidewall of the bit line structure, a contact plug structure on the active pattern and adjacent to the bit line structure, and a capacitor on the contact plug structure. The lower spacer structure includes first and second lower spacers that are sequentially stacked from the lower sidewall of the bit line structure in a horizontal direction that is substantially parallel to an upper surface of the substrate, the first lower spacer includes an oxide, and contacts the lower sidewall of the bit line structure, but does not contact the contact plug structure, and the second lower spacer includes a material different from any of the materials of the first lower spacer.

公开(公告)号：US20190287975A1

公开(公告)日：2019-09-19

申请号：US16422054

申请日：2019-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-Gun KIM ,  Joonkyu RHEE ,  Ji-Hye Lee ,  Chanmi LEE ,  Taeseop CHOI

IPC: H01L27/108

Abstract: Example embodiments relate to a semiconductor device. The semiconductor device includes a substrate including an active region extending in a first direction, a plurality of bit lines running across the active region in a second direction crossing the first direction, a first spacer on a sidewall of the bit line, and a storage node contact on the active region between adjacent bit lines. The first spacer includes a first part between the storage node contact and the bit line, a second part between the first part and the storage node contact, and a third part between the first and second parts. A minimum vertical thickness of the first part is greater than a maximum vertical thickness of the third part. The maximum vertical thickness of the third part is greater than a maximum vertical thickness of the second part.

公开(公告)号：US20170271340A1

公开(公告)日：2017-09-21

申请号：US15405808

申请日：2017-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-Gun KIM ,  Joonkyu RHEE ,  Ji-Hye LEE ,  Chanmi LEE ,  Taeseop CHOI

IPC: H01L27/108 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L27/10814 ,  H01L21/7682 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

Abstract: Example embodiments relate to a semiconductor device. The semiconductor device includes a substrate including an active region extending in a first direction, a plurality of bit lines running across the active region in a second direction crossing the first direction, a first spacer on a sidewall of the bit line, and a storage node contact on the active region between adjacent bit lines. The first spacer includes a first part between the storage node contact and the bit line, a second part between the first part and the storage node contact, and a third part between the first and second parts. A minimum vertical thickness of the first part is greater than a maximum vertical thickness of the third part. The maximum vertical thickness of the third part is greater than a maximum vertical thickness of the second part.