公开(公告)号：US20240213138A1

公开(公告)日：2024-06-27

申请号：US18524454

申请日：2023-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Yeong KIM ,  Jun Hong MIN ,  Eun Suk JUNG ,  So Hye CHO

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/14

CPC classification number: H01L23/49894 ,  H01L23/147 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/29186 ,  H01L2224/29686 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01014 ,  H01L2924/35121

Abstract: A semiconductor package includes a first substrate including silicon, a first insulating layer in contact with the first substrate, the first insulating layer including silicon oxide, the first insulating layer having a first concentration of silicon, a second insulating layer in contact with the first insulating layer, the second insulating layer including silicon oxide, the second insulating layer having a second concentration of silicon, the second concentration lower than the first concentration, and a structure on the second insulating layer. The first concentration is a ratio of a weight of silicon in the first insulating layer to a total weight of the first insulating layer, the second concentration is a ratio of a weight of silicon in the second insulating layer to a total weight of the second insulating layer, and the first concentration is in a range from 20 wt % to 50 wt %.