公开(公告)号：US11380687B2

公开(公告)日：2022-07-05

申请号：US17126166

申请日：2020-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Mo Park ,  Ju Youn Kim ,  Hyung Joo Na ,  Sang Min Yoo ,  Eui Chui Hwang

IPC: H01L21/00 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a substrate including first and second regions, first active fins extending in a first direction on the first region, second active fins extending parallel to the first active fins on the second region, and single diffusion break regions between two first active fins. Single diffusion break regions may be spaced apart from each other in the first direction. The semiconductor devices may also include a lower diffusion break region between two second active fins and extending in a second direction that is different from the first direction and upper diffusion break regions on the lower diffusion break region. The upper diffusion break regions may be spaced apart from each other in the first direction, and each of the upper diffusion break regions may overlap the lower diffusion break region.

公开(公告)号：US11347563B2

公开(公告)日：2022-05-31

申请号：US16450299

申请日：2019-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Mo Park ,  Bum Gyu Park ,  Dae Yeong Lee ,  Lak-Kyung Jung ,  Dae Hyun Cho

IPC: G06F9/48 ,  G06F9/50

Abstract: A computing system includes an ISA identifier to identify an ISA (Instruction Set Architecture) of a task; a core selector to select a core having a highest power-performance efficiency among a plurality of cores based on the identified ISA; and a task allocator to allocate the task to the selected core.

公开(公告)号：US10910376B2

公开(公告)日：2021-02-02

申请号：US16290222

申请日：2019-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Mo Park ,  Ju Youn Kim ,  Hyung Joo Na ,  Sang Min Yoo ,  Eui Chul Hwang

IPC: H01L21/00 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a substrate including first and second regions, first active fins extending in a first direction on the first region, second active fins extending parallel to the first active fins on the second region, and single diffusion break regions between two first active fins. Single diffusion break regions may be spaced apart from each other in the first direction. The semiconductor devices may also include a lower diffusion break region between two second active fins and extending in a second direction that is different from the first direction and upper diffusion break regions on the lower diffusion break region. The upper diffusion break regions may be spaced apart from each other in the first direction, and each of the upper diffusion break regions may overlap the lower diffusion break region.