公开(公告)号：US11101269B2

公开(公告)日：2021-08-24

申请号：US17025497

申请日：2020-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Min Yoo ,  Ju Youn Kim ,  Hyung Joo Na ,  Bong Seok Suh ,  Joo Ho Jung ,  Eui Chui Hwang ,  Sung Moon Lee

IPC: H01L27/088 ,  H01L29/40 ,  H01L21/762 ,  H01L29/78

Abstract: A semiconductor device includes a first active pattern extending lengthwise along a first direction and a second active pattern extending lengthwise along the first direction and spaced apart from the first active pattern in the first direction. The device also includes a field insulating film between the first active pattern and the second active pattern. An upper surface of the field insulating film is lower than or coplanar with upper surfaces of the first and second active patterns. The device further includes an element isolation structure in an isolation trench in the first active pattern and the field insulating film. An upper surface of the element isolation structure is higher than the upper surfaces of the first and second active patterns.

公开(公告)号：US11784186B2

公开(公告)日：2023-10-10

申请号：US17393025

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Min Yoo ,  Ju Youn Kim ,  Hyung Joo Na ,  Bong Seok Suh ,  Joo Ho Jung ,  Eui Chui Hwang ,  Sung Moon Lee

IPC: H01L27/088 ,  H01L29/40 ,  H01L21/762 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/76224 ,  H01L29/408 ,  H01L29/7846

Abstract: A semiconductor device includes a first active pattern extending lengthwise along a first direction and a second active pattern extending lengthwise along the first direction and spaced apart from the first active pattern in the first direction. The device also includes a field insulating film between the first active pattern and the second active pattern. An upper surface of the field insulating film is lower than or coplanar with upper surfaces of the first and second active patterns. The device further includes an element isolation structure in an isolation trench in the first active pattern and the field insulating film. An upper surface of the element isolation structure is higher than the upper surfaces of the first and second active patterns.

公开(公告)号：US11380687B2

公开(公告)日：2022-07-05

申请号：US17126166

申请日：2020-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Mo Park ,  Ju Youn Kim ,  Hyung Joo Na ,  Sang Min Yoo ,  Eui Chui Hwang

IPC: H01L21/00 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a substrate including first and second regions, first active fins extending in a first direction on the first region, second active fins extending parallel to the first active fins on the second region, and single diffusion break regions between two first active fins. Single diffusion break regions may be spaced apart from each other in the first direction. The semiconductor devices may also include a lower diffusion break region between two second active fins and extending in a second direction that is different from the first direction and upper diffusion break regions on the lower diffusion break region. The upper diffusion break regions may be spaced apart from each other in the first direction, and each of the upper diffusion break regions may overlap the lower diffusion break region.