公开(公告)号：US20200071566A1

公开(公告)日：2020-03-05

申请号：US16553623

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hyun Park ,  Hyo-san Lee ,  Won-ki Hur ,  Jung-yoon Kim ,  Jun-ha Hwang ,  Chang-gil Kwon ,  Sung-pyo Lee

IPC: C09G1/02

Abstract: A slurry composition for a chemical mechanical polishing (CMP) process includes about 0.1% by weight to about 10% by weight of polishing particles, about 0.001% by weight to about 1% by weight of an amine compound, about 0.001% by weight to about 1% by weight of a first cationic compound that is amino acid, about 0.001% by weight to about 1% by weight of a second cationic compound that is organic acid, and about 1% by weight to about 5% by weight of polyhydric alcohol including at least two hydroxyl groups.