公开(公告)号：US20200071566A1

公开(公告)日：2020-03-05

申请号：US16553623

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hyun Park ,  Hyo-san Lee ,  Won-ki Hur ,  Jung-yoon Kim ,  Jun-ha Hwang ,  Chang-gil Kwon ,  Sung-pyo Lee

IPC: C09G1/02

Abstract: A slurry composition for a chemical mechanical polishing (CMP) process includes about 0.1% by weight to about 10% by weight of polishing particles, about 0.001% by weight to about 1% by weight of an amine compound, about 0.001% by weight to about 1% by weight of a first cationic compound that is amino acid, about 0.001% by weight to about 1% by weight of a second cationic compound that is organic acid, and about 1% by weight to about 5% by weight of polyhydric alcohol including at least two hydroxyl groups.

公开(公告)号：US09991127B2

公开(公告)日：2018-06-05

申请号：US15286976

申请日：2016-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hyun Park ,  Jae-hak Lee ,  Bo-hyeok Choi ,  Sang-kyun Kim ,  Won-ki Hur

IPC: H01L21/306 ,  C09G1/02 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/02532 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258

Abstract: A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.

公开(公告)号：US20170207100A1

公开(公告)日：2017-07-20

申请号：US15286976

申请日：2016-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hyun Park ,  Jae-hak Lee ,  Bo-hyeok Choi ,  Sang-kyun Kim ,  Won-ki Hur

IPC: H01L21/306 ,  H01L21/02 ,  C09G1/02 ,  H01L21/308

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/02532 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258

Abstract: A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.