公开(公告)号：US11676824B2

公开(公告)日：2023-06-13

申请号：US16540466

申请日：2019-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-kwon Kim ,  Seung-ho Park ,  Sang-won Bae ,  Woo-in Lee ,  Hyo-san Lee ,  Sun-jae Jang

IPC: H01L21/321 ,  B24B37/04 ,  B24B57/00 ,  B24B37/11

CPC classification number: H01L21/3212 ,  B24B37/04 ,  B24B37/11 ,  B24B57/00

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

公开(公告)号：US10525566B2

公开(公告)日：2020-01-07

申请号：US15602256

申请日：2017-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-ki Hong ,  Yung-jun Kim ,  Sung-oh Park ,  Hyo-san Lee ,  Joo-han Lee ,  Kyu-min Oh ,  Sun-gyu Park ,  Seh-kwang Lee ,  Chan-ki Yang

IPC: B24B53/017 ,  B24B37/04 ,  H01L21/321 ,  H01L21/66 ,  B24B37/005 ,  H01L21/768

Abstract: A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.

公开(公告)号：US11142694B2

公开(公告)日：2021-10-12

申请号：US16565690

申请日：2019-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-ah Kim ,  Young-chan Kim ,  Hyo-san Lee ,  Hoon Han ,  Jin-uk Lee ,  Jung-hun Lim ,  Ik-hee Kim

IPC: C09K13/04 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/11556 ,  H01L27/11582

Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

公开(公告)号：US20200185231A1

公开(公告)日：2020-06-11

申请号：US16540466

申请日：2019-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-kwon Kim ,  Seung-ho Park ,  Sang-won Bae ,  Woo-in Lee ,  Hyo-san Lee ,  Sun-jae Jang

IPC: H01L21/321 ,  B24B37/04 ,  B24B37/11 ,  B24B57/00

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

公开(公告)号：US20200071566A1

公开(公告)日：2020-03-05

申请号：US16553623

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hyun Park ,  Hyo-san Lee ,  Won-ki Hur ,  Jung-yoon Kim ,  Jun-ha Hwang ,  Chang-gil Kwon ,  Sung-pyo Lee

IPC: C09G1/02

Abstract: A slurry composition for a chemical mechanical polishing (CMP) process includes about 0.1% by weight to about 10% by weight of polishing particles, about 0.001% by weight to about 1% by weight of an amine compound, about 0.001% by weight to about 1% by weight of a first cationic compound that is amino acid, about 0.001% by weight to about 1% by weight of a second cationic compound that is organic acid, and about 1% by weight to about 5% by weight of polyhydric alcohol including at least two hydroxyl groups.

公开(公告)号：US10332762B2

公开(公告)日：2019-06-25

申请号：US15172740

申请日：2016-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-hoo Kim ,  Il-sang Lee ,  In-gi Kim ,  Kyoung-hwan Kim ,  Hyo-san Lee ,  Sang-won Bae ,  Tae-hong Kim ,  Yong-jun Choi

IPC: H01L21/67

Abstract: A chemical liquid supply apparatus includes a nozzle unit including a nozzle arm and an injection nozzle mounted in an end of the nozzle arm, a chemical liquid supply unit including a first chemical liquid tank accommodating a first chemical liquid and a second chemical liquid tank accommodating a second chemical liquid, and supplying the first chemical liquid and the second chemical liquid to the nozzle unit, and a mixer unit provided in the nozzle unit and discharging a process fluid by mixing the first chemical liquid and the second chemical liquid, wherein the mixer unit includes an in-line mixer mixing the first chemical liquid and the second chemical liquid that are continually injected from the chemical liquid supply unit, and a mixer pipe extending from the in-line mixer to the injection nozzle.