公开(公告)号：US20240258354A1

公开(公告)日：2024-08-01

申请号：US18242597

申请日：2023-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungsan Kim ,  Kwansik Kim ,  Jinyong Choi ,  Gayoung Kim ,  Taemin Kim ,  Yongsoon Park ,  Ingyu Baek ,  Seungho Lee

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/14603 ,  H01L27/14645

Abstract: An image sensor includes a lower insulating film arranged over a substrate and having a non-flat surface that has a concave-convex shape and includes a first surface, which extends in a horizontal direction parallel to a frontside surface of the substrate, and at least one second surface extending from the first surface toward the substrate, a capacitor arranged on the lower insulating film to contact the non-flat surface of the lower insulating film and conformally covering the non-flat surface of the lower insulating film along the contour of the non-flat surface of the lower insulating film, an upper insulating film covering the capacitor and the lower insulating film, and at least one air gap having a side facing the at least one second surface of the lower insulating film in the horizontal direction and having a height defined by the upper insulating film in a vertical direction.

公开(公告)号：US20240222399A1

公开(公告)日：2024-07-04

申请号：US18380795

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu Baek ,  Kwansik Kim ,  Jungsan Kim ,  Taemin KIM

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor may include a substrate including pixels, a first transistor and a second transistor disposed on the substrate and spaced apart from each other, a first interlayer insulating layer covering the first transistor and the second transistor, a first lower electrode disposed in the first interlayer insulating layer and connected to an end portion of the first transistor, a first dielectric layer on the first lower electrode, a first upper electrode on the first dielectric layer, a second interlayer insulating layer covering the first upper electrode and the first interlayer insulating layer, and a first pillar provided to penetrate the second and first interlayer insulating layers and connected to an end portion of the second transistor.