公开(公告)号：US20250097598A1

公开(公告)日：2025-03-20

申请号：US18963915

申请日：2024-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook LIM ,  Jihun KIM

IPC: H04N25/704 ,  H04N25/11 ,  H04N25/77

Abstract: An image sensor including: a pixel array including first and second pixel groups, each of the first and second pixel groups includes of pixels arranged in rows and columns; and a row driver configured to provide transmission control signals to the pixel array, the first pixel group includes a first auto-focus (AF) pixel including photodiodes arranged in a first direction, the pixels of the first pixel group output a pixel signal through a first column line, and the second pixel group includes a second AF pixel including photodiodes arranged in a second direction perpendicular to the first direction, the pixels of the second pixel group output a pixel signal through a second column line, and the first AF pixel of the first pixel group and the second AF pixel of the second pixel group receive same transmission control signals.

公开(公告)号：US20250081645A1

公开(公告)日：2025-03-06

申请号：US18661946

申请日：2024-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungwook LIM

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/522

Abstract: Disclosed is an image sensor comprising a first semiconductor substrate that includes a first pixel region and a second pixel region, a first photoelectric conversion element on the first pixel region, a second photoelectric conversion element on the second pixel region, a first floating diffusion section on the first pixel region, a second floating diffusion section on the second pixel region, a first transfer gate electrode between the first photoelectric conversion element and the first floating diffusion section, a second transfer gate electrode between the second photoelectric conversion element and the second floating diffusion section, a second semiconductor substrate on the first semiconductor substrate, and pixel transistors connected to the first and second photoelectric conversion elements. A width of the second photoelectric conversion element is less than that of the first photoelectric conversion element. At least one of the pixel transistors is on the second semiconductor substrate.

公开(公告)号：US20230007200A1

公开(公告)日：2023-01-05

申请号：US17719649

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook LIM

IPC: H04N5/369 ,  H01L27/146

Abstract: A depth sensor and an image detecting system including the same are provided. The depth sensor includes a pixel that generates an image signal based on a sensed light. The pixel includes a first photo transistor that integrates first charges based on a first photo gate signal toggling during an integration period, a second photo transistor that integrates second charges based on a second photo gate signal toggling during the integration period, a first transfer transistor that transfers the first charges to a first floating diffusion node based on a first transfer gate signal, a second transfer transistor that transfers the second charges to a second floating diffusion node based on the first transfer gate signal, and a switch that is connected with the first photo transistor, the second photo transistor, the first transfer transistor, and the second transfer transistor.

公开(公告)号：US20220286629A1

公开(公告)日：2022-09-08

申请号：US17529744

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanwoong KIM ,  Jihun KIM ,  Jueun PARK ,  Jungwook LIM ,  Youjin JEONG ,  Taesub JUNG

IPC: H04N5/361 ,  H04N5/359

Abstract: An image sensor includes: a pixel array including pixels and reference pixels; an analog sensing circuit configured to sense signals from the pixels and the reference pixels; and a digital logic circuit configured to receive the sensed signals from the analog sensing circuit and configured to compensate signals corresponding to the pixels from among the sensed signals by using signals corresponding to the reference pixels from among the sensed signals, wherein each of the reference pixels is at least partially surround by the pixels.

公开(公告)号：US20240186359A1

公开(公告)日：2024-06-06

申请号：US18244342

申请日：2023-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook LIM ,  Younggu JIN

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685

Abstract: An image sensor includes: a pixel array including a plurality of pixels, wherein each of the pixels includes a first photodiode, a second photodiode, a first transmission gate, a second transmission gate, and a plurality of active regions; and a logic circuit configured to control the pixels. The plurality of active regions include a first active region, a second active region and a third active region. The first active region is disposed adjacent to the first transmission gate. The second active region is disposed adjacent to the second transmission gate. The third active region is electrically connected to the second active region. The first active region and the second active region are disposed on a main substrate including the first and second photodiodes. The third active region is disposed on a sub-substrate attached to the main substrate.

公开(公告)号：US20240098384A1

公开(公告)日：2024-03-21

申请号：US18513747

申请日：2023-11-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook LIM ,  Jihun KIM

IPC: H04N25/704

CPC classification number: H04N25/704 ,  H04N25/11

Abstract: An image sensor including: a pixel array including first and second pixel groups, each of the first and second pixel groups includes of pixels arranged in rows and columns; and a row driver configured to provide transmission control signals to the pixel array, the first pixel group includes a first auto-focus (AF) pixel including photodiodes arranged in a first direction, the pixels of the first pixel group output a pixel signal through a first column line, and the second pixel group includes a second AF pixel including photodiodes arranged in a second direction perpendicular to the first direction, the pixels of the second pixel group output a pixel signal through a second column line, and the first AF pixel of the first pixel group and the second AF pixel of the second pixel group receive same transmission control signals.

公开(公告)号：US20230299099A1

公开(公告)日：2023-09-21

申请号：US17991258

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook LIM ,  Seojoo KIM ,  Soeun PARK ,  Sunghyuck CHO

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor is provided. The image sensor includes: a first photodiode (PD) provided in a first area; a second PD provided in a second area, wherein the second area is smaller than and adjacent to the first area; a first floating diffusion region that is provided in the first area and connected to the first PD via a first transfer transistor; a second floating diffusion region that is connected to a power source via a first reset transistor and the first floating diffusion region via a second reset transistor; a third floating diffusion region that is provided in the second area, and is connected to the second PD via the second transfer transistor and the second floating diffusion region via a first switch; and a capacitor connected between the third floating diffusion region and the power source.

公开(公告)号：US20230134685A1

公开(公告)日：2023-05-04

申请号：US18051606

申请日：2022-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook LIM

IPC: H04N5/335

Abstract: In an image sensor including a pixel array having a plurality of pixels, each of the plurality of pixels includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node where charge generated in the first photodiode is accumulated; a second floating diffusion node where charge generated in the second photodiode is accumulated; a first capacitor accumulating charge overflowing from the first photodiode; a first driving transistor configured to generate an output signal corresponding to a voltage of the second floating diffusion node; and a second capacitor storing an amount of overflow charges according to an overflow operation for accumulating the overflowing charge and storing an amount of reset charges according to a reset operation for resetting the first floating diffusion node.

公开(公告)号：US20240406591A1

公开(公告)日：2024-12-05

申请号：US18525211

申请日：2023-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook LIM

IPC: H04N25/59 ,  H01L27/146 ,  H04N23/667 ,  H04N25/51 ,  H04N25/77

Abstract: Disclosed is an image sensor. The image sensor includes a plurality of pixels, one of which includes: a driving transistor; a first switching transistor; a first photoelectric conversion element group with first photoelectric conversion elements; a second photoelectric conversion element group with at least one second photoelectric conversion element; a first floating diffusion region connected to the first photoelectric conversion elements through a first transfer transistor; a second floating diffusion region connected to the at least one second photoelectric conversion element through a second transfer transistor; a third floating diffusion region connected to a gate of the driving transistor, and separated from each of the first floating diffusion region and the second floating diffusion region by the first switching transistor; and a reset transistor with a first end to which a reset voltage is applied and a second end connected to the third floating diffusion region.

公开(公告)号：US20240214703A1

公开(公告)日：2024-06-27

申请号：US18390867

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunji PARK ,  Jungwook LIM

IPC: H04N25/709 ,  H01L27/146 ,  H04N25/77

CPC classification number: H04N25/709 ,  H01L27/14607 ,  H04N25/77 ,  H04N25/766

Abstract: An image sensor includes a plurality of pixels, each pixel of the plurality of pixels includes, a first photodiode, a second photodiode, a first transfer transistor connected to a first floating diffusion node, a second transfer transistor connected to a second floating diffusion node, a first reset transistor configured to reset the first floating diffusion node with a first reset power supply voltage, a second reset transistor configured to reset the second floating diffusion node with a second reset power supply voltage, a switch transistor connecting the second floating diffusion node to the first floating diffusion node, and a first driving transistor configured to output an output voltage according to a voltage of the first floating diffusion node.