公开(公告)号：US20230290804A1

公开(公告)日：2023-09-14

申请号：US18061800

申请日：2022-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoongi JOUNG ,  Junghyun KIM ,  Gyeongjin LEE ,  Junsik LEE ,  Jonghoon PARK ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14634

Abstract: A method of manufacturing an image sensor includes forming a first chip structure including a circuit wiring structure, forming a second chip structure on the first chip structure, the second chip structure including a plurality of photoelectric conversion device regions, forming a lens material layer on the second chip structure, forming an isolation groove defining a plurality of lens regions in the lens material layer, forming internal grooves in the plurality of lens regions of the lens material layer surrounded by the isolation groove, and forming lens patterns using the lens material layer in which the isolation groove and the internal grooves are formed.

公开(公告)号：US20230282668A1

公开(公告)日：2023-09-07

申请号：US18117166

申请日：2023-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Junsik LEE ,  Junghyun KIM ,  Gyeongjin LEE ,  Yoongi JOUNG ,  Jonghoon PARK ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor includes a substrate having first and second surfaces opposing each other; a circuit interconnection structure provided below the first surface of the substrate; a group provided in the substrate and including a plurality of pixel substrate regions; and an isolation structure provided in the substrate, wherein the isolation structure includes an isolation portion surrounding the group and extension portions extending from the isolation portion to a region between the plurality of pixel substrate regions of the group, wherein, in the group, the extension portions have end portions spaced apart from each other, and wherein at least one of the extension portions includes a width reduction region in which a width decreases in a direction away from the isolation portion.

公开(公告)号：US20240153974A1

公开(公告)日：2024-05-09

申请号：US18386328

申请日：2023-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghyun KIM ,  Jonghoon PARK ,  Yunki LEE ,  Junsik LEE

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14603 ,  H01L27/14627 ,  H01L27/14645

Abstract: An image sensor comprising a plurality of first photoelectric conversion regions corresponding to a plurality of first subpixels, a first color filter region above the plurality of first photoelectric conversion regions, and a first microlens above the first color filter region, wherein, the first color filter region includes a first grid structure at a central portion of the first color filter region, and a height of the first grid structure is smaller than a height of the first color filter region.

公开(公告)号：US20230299096A1

公开(公告)日：2023-09-21

申请号：US17987172

申请日：2022-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoongi JOUNG ,  Junghyun KIM ,  Gyeongjin LEE ,  Junsik LEE ,  Jonghoon PARK ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor including a substrate including a first and second surface; a pixel isolation structure penetrating the substrate, arranged in a pixel isolation trench extending from the first to second surface of the substrate, and defining a pixel region; a plurality of sub pixel regions on the pixel region; a plurality of photoelectric conversion regions on the plurality of sub pixel regions; a signal separation structure between the plurality of sub pixel regions, the signal separation structure being in a signal separation trench extending from the second surface of the substrate toward the first surface of the substrate into the substrate; and a micro lens on the second surface of the substrate, the micro lens corresponding to the pixel region, wherein the signal separation structure includes an insulating layer, and the pixel isolation structure includes a conductive layer; and a liner layer between the conductive layer and the substrate.