公开(公告)号：US20240321913A1

公开(公告)日：2024-09-26

申请号：US18526322

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghyun KIM ,  Jonghoon PARK ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14645

Abstract: An image sensor may include four unit pixels constituting a shared pixel in a 2*2 structure; and a Deep Trench Isolation (DTI) structure isolating the four unit pixels from each other. The DTI structure may include an inner DTI structure inside the shared pixel and an outer DTI structure surrounding the shared pixel. The inner DTI structure may include a first DTI structure passing through a center of the shared pixel and extending in a first direction or a second direction and a second DTI structure extending toward the center of the shared pixel in a direction perpendicular to a direction in which the first DTI structure extends. The shared pixel may include a DTI Center Cut (DCC) region between the first DTI structure and the second DTI structure in a direction in which the second DTI structure extends.

公开(公告)号：US20240221844A1

公开(公告)日：2024-07-04

申请号：US18532730

申请日：2023-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeduk YU ,  Jonghoon PARK ,  Yohan LEE ,  Sangsoo PARK

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/08

CPC classification number: G11C16/26 ,  G11C16/0433 ,  G11C16/08

Abstract: Provided is an operating method of a nonvolatile memory device. The operating method includes receiving a read command, increasing a voltage applied to a plurality of unselected ground selection lines from an off voltage to an on voltage during a word line setup period, applying a first voltage to a first selected ground selection line corresponding to a first process characteristic, until a first time in the word line setup period, applying a second voltage to the first selected ground selection line after the first time in the word line setup period, applying the first voltage to a second selected ground selection line corresponding to a second process characteristic, until a second time earlier than the first time in the word line setup period, and applying the second voltage to the second selected ground selection line after the second time in the word line setup period.

公开(公告)号：US20240258346A1

公开(公告)日：2024-08-01

申请号：US18387933

申请日：2023-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghyun KIM ,  Jonghoon PARK ,  Yun Ki LEE

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes: a substrate; a plurality of photodiodes disposed in the substrate; an element isolation film disposed between the plurality of photodiodes; an anti-reflection layer disposed on the plurality of photodiodes and the element isolation film; a plurality of color filters disposed on the anti-reflection layer; a fence pattern disposed between the plurality of color filters and in the anti-reflection layer; and micro lenses disposed on the plurality of color filters, wherein the fence pattern includes a first layer and a second layer that is disposed on the first layer and that includes a material different from that of the first layer, the first layer is disposed in the anti-reflection layer, and the second layer includes a first part and a second part, wherein the first part is disposed in the plurality of color filters, and wherein the second part is disposed in the anti-reflection layer.

公开(公告)号：US20230290804A1

公开(公告)日：2023-09-14

申请号：US18061800

申请日：2022-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoongi JOUNG ,  Junghyun KIM ,  Gyeongjin LEE ,  Junsik LEE ,  Jonghoon PARK ,  Yunki LEE

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14634

Abstract: A method of manufacturing an image sensor includes forming a first chip structure including a circuit wiring structure, forming a second chip structure on the first chip structure, the second chip structure including a plurality of photoelectric conversion device regions, forming a lens material layer on the second chip structure, forming an isolation groove defining a plurality of lens regions in the lens material layer, forming internal grooves in the plurality of lens regions of the lens material layer surrounded by the isolation groove, and forming lens patterns using the lens material layer in which the isolation groove and the internal grooves are formed.

公开(公告)号：US20180018477A1

公开(公告)日：2018-01-18

申请号：US15718826

申请日：2017-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Teain AN ,  Taeho KIM ,  Hyungjoon KIM ,  Seulhan PARK ,  Jonghoon PARK ,  Heejun YOU ,  Yangsoo LEE ,  Moonsu CHANG ,  Jinho HYEON

IPC: G06F21/74 ,  G06F21/32

Abstract: A method and apparatus for processing biometric information in an electronic device including a processor that operates at a normal mode or at a secure mode, the method comprising, detecting a biometric input event from a biometric sensor module at normal mode, creating biometric data based on sensed data from the biometric sensor module at the secure mode, performing biometric registration or biometric authentication based on the created biometric data at the secure mode, and providing result information of biometric registration or biometric authentication at the normal mode.

公开(公告)号：US20250126917A1

公开(公告)日：2025-04-17

申请号：US18655714

申请日：2024-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghoon PARK ,  Junghyun KIM ,  Jungchak AHN ,  Yun Ki LEE ,  Junsik LEE

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate including a plurality of pixels, a first surface, and a second surface, opposing the first surface, and a device isolation layer in a trench penetrating through the first surface and the second surface of the semiconductor substrate and separating the pixels from each other. The device isolation layer may include a conductive separation layer extending from the first surface to the second surface, an insulating liner interposed between the conductive separation layer and the semiconductor substrate, and a capping separation layer extending in a direction from the second surface to the first surface and contacting the conductive separation layer.

公开(公告)号：US20250107261A1

公开(公告)日：2025-03-27

申请号：US18976574

申请日：2024-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghoon PARK ,  Bumsuk KIM ,  Yunki LEE ,  Bomi KIM ,  Kwanhee LEE ,  Yoongi JOUNG

IPC: H01L27/146 ,  H04N25/71 ,  H04N25/75 ,  H04N25/77

Abstract: A pixel array including: a plurality of pixel groups, each pixel group including: a plurality of unit pixels respectively including photoelectric conversion elements disposed in a semiconductor substrate; trench structures disposed in the semiconductor substrate and extending in a vertical direction from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate to electrically and optically separate the photoelectric conversion elements from each other; and a microlens disposed above or below the semiconductor substrate, the microlens covering all of the photoelectric conversion elements in the plurality of unit pixels to focus an incident light to the photoelectric conversion elements.

公开(公告)号：US20250024164A1

公开(公告)日：2025-01-16

申请号：US18771526

申请日：2024-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chulsoo CHOI ,  Bumsuk KIM ,  Junghun KIM ,  Jonghoon PARK ,  Yunki LEE

IPC: H04N25/13 ,  H04N23/55

Abstract: An image sensor includes a sensor substrate including a plurality of first photosensitive cells configured to sense light and a color separating lens array in an upper portion of the sensor substrate and including a plurality of first sub regions respectively corresponding to the plurality of first photosensitive cells, where each of the plurality of first sub regions include a plurality of first nano-posts, where the plurality of first sub regions include at least one first central sub region at a center of the color separating lens array and at least one first peripheral sub region at a periphery of the color separating lens array, and where the plurality of first nano-posts include at least one first nano-post in the at least one first central sub region and at least one second nano-post in the at least one first peripheral sub region and corresponding to the at least one first nano-post.

公开(公告)号：US20240247831A1

公开(公告)日：2024-07-25

申请号：US18533739

申请日：2023-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Manki HA ,  Daechul HAN ,  Youngjin KIM ,  Jonghoon PARK ,  Kongsik YOUN ,  Seokhyun JANG ,  Ilyong CHO ,  Jaehun HUR

IPC: F24F11/50 ,  F24F11/30 ,  F24F11/63

CPC classification number: F24F11/50 ,  F24F11/30 ,  F24F11/63

Abstract: An air conditioner including an indoor controller configured to receive an operation command from a user, and generate a plurality of first communication signals corresponding to the operation command; an outdoor unit; and a main controller configured to connect to the indoor controller and the outdoor unit, receive the plurality of first communication signals, and convert the plurality of first communication signals into a single second communication signal by combining the plurality of first communication signals, and transmit the single second communication signal to the outdoor unit to control operation of the outdoor unit. The outdoor unit is configured to receive the single second communication signal, and operate based on the single second communication signal.

公开(公告)号：US20220130876A1

公开(公告)日：2022-04-28

申请号：US17402756

申请日：2021-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghoon PARK ,  Bumsuk KIM ,  Yun LEE ,  Bomi L. KIM ,  Kwanhee LEE ,  Yeongi JOUNG

IPC: H01L27/146

Abstract: A pixel array including: a plurality of pixel groups, each pixel group including: a plurality of unit pixels respectively including photoelectric conversion elements disposed in a semiconductor substrate; trench structures disposed in the semiconductor substrate and extending in a vertical direction from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate to electrically and optically separate the photoelectric conversion elements from each other; and a microlens disposed above or below the semiconductor substrate, the microlens covering all of the photoelectric conversion elements in the plurality of unit pixels to focus an incident light to the photoelectric conversion elements.