公开(公告)号：US20230386841A1

公开(公告)日：2023-11-30

申请号：US18125936

申请日：2023-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeyoung Kim ,  Woojin Jung ,  Soonmok Ha ,  Junsik Yu ,  Seungkyo Lee

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/66 ,  G03F7/20

CPC classification number: H01L21/0335 ,  H01L21/31144 ,  H01L21/0337 ,  H01L22/20 ,  G03F7/70533

Abstract: Provided is a method for forming a photoresist pattern, in which a silicon oxide layer is formed on a substrate. A first photoresist pattern, which contacts the silicon oxide layer, is formed on the silicon oxide layer. Entire-surface exposure is performed on the substrate on which the first photoresist pattern having a defect is formed. The first photoresist pattern is entirely removed by developing the first photoresist pattern, which has been subject to the entire-surface exposure. In addition, a second photoresist pattern is formed on the silicon oxide layer.