公开(公告)号：US20240290915A1

公开(公告)日：2024-08-29

申请号：US18581676

申请日：2024-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juwon Jeong ,  Sanghyun Kim ,  Jiho You ,  Sungwoo Choi

IPC: H01L33/46 ,  H01L33/50 ,  H01L33/60

CPC classification number: H01L33/46 ,  H01L33/502 ,  H01L33/60

Abstract: A semiconductor light-emitting device includes a light emitting structure, a wavelength conversion member arranged on an upper surface of the light emitting structure, the wavelength conversion member including a first surface in contact with the light emitting structure, a second surface opposite to the first surface, and a sidewall, wherein the first surface entirely covers the upper surface of the light emitting structure, and a portion of the sidewall adjacent to the first surface is slanted with respect to the first surface, and a coating layer arranged on the second surface of the wavelength conversion member, the coating layer including a first material layer and a second material layer alternately stacked on the second surface, wherein the first material layer includes an oxide, and the second material layer includes magnesium fluoride (MgF2), wherein the second material layer is arranged at an uppermost surface of the coating layer.