公开(公告)号：US12080703B2

公开(公告)日：2024-09-03

申请号：US18048186

申请日：2022-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Vassilios Gerousis ,  Rwik Sengupta ,  Joon Goo Hong ,  Kevin Traynor ,  Tanya Abaya ,  Dharmendar Palle ,  Mark S. Rodder

IPC: H01L27/02 ,  G06F30/392 ,  H01L23/528

CPC classification number: H01L27/0207 ,  G06F30/392 ,  H01L23/5286

Abstract: A semiconductor cell block includes a series of layers arranged in a stack. The layers include one or more first layers each having a first height and one or more second layers each having a second height. The second height is larger than the first height, and the second height is a non-integer multiple of the first height. The semiconductor cell block also includes a first semiconductor logic cell having a first cell height in one of the series of layers, and a second semiconductor logic cell having a second cell height in one of the series of layers. The second cell height is larger than the first cell height, and the second cell height is a non-integer value multiple of the first cell height.

公开(公告)号：US11552067B2

公开(公告)日：2023-01-10

申请号：US16853535

申请日：2020-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Vassilios Gerousis ,  Rwik Sengupta ,  Joon Goo Hong ,  Kevin Traynor ,  Tanya Abaya ,  Dharmendar Palle ,  Mark S. Rodder

IPC: H01L23/528 ,  H01L27/02 ,  G06F30/392

Abstract: A semiconductor cell block includes a series of layers arranged in a stack. The layers include one or more first layers each having a first height and one or more second layers each having a second height. The second height is larger than the first height, and the second height is a non-integer multiple of the first height. The semiconductor cell block also includes a first semiconductor logic cell having a first cell height in one of the series of layers, and a second semiconductor logic cell having a second cell height in one of the series of layers. The second cell height is larger than the first cell height, and the second cell height is a non-integer value multiple of the first cell height.

公开(公告)号：US20210265334A1

公开(公告)日：2021-08-26

申请号：US16853535

申请日：2020-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Vassilios Gerousis ,  Rwik Sengupta ,  Joon Goo Hong ,  Kevin Traynor ,  Tanya Abaya ,  Dharmendar Palle ,  Mark S. Rodder

IPC: H01L27/02 ,  H01L23/528 ,  G06F30/392

Abstract: A semiconductor cell block includes a series of layers arranged in a stack. The layers include one or more first layers each having a first height and one or more second layers each having a second height. The second height is larger than the first height, and the second height is a non-integer multiple of the first height. The semiconductor cell block also includes a first semiconductor logic cell having a first cell height in one of the series of layers, and a second semiconductor logic cell having a second cell height in one of the series of layers. The second cell height is larger than the first cell height, and the second cell height is a non-integer value multiple of the first cell height.

公开(公告)号：US20240379653A1

公开(公告)日：2024-11-14

申请号：US18782939

申请日：2024-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Vassilios Gerousis ,  Rwik Sengupta ,  Joon Goo Hong ,  Kevin Traynor ,  Tanya Abaya ,  Dharmendar Palle ,  Mark S. Rodder

IPC: H01L27/02 ,  G06F30/392 ,  H01L23/528

Abstract: A semiconductor cell block includes a series of layers arranged in a stack. The layers include one or more first layers each having a first height and one or more second layers each having a second height. The second height is larger than the first height, and the second height is a non-integer multiple of the first height. The semiconductor cell block also includes a first semiconductor logic cell having a first cell height in one of the series of layers, and a second semiconductor logic cell having a second cell height in one of the series of layers. The second cell height is larger than the first cell height, and the second cell height is a non-integer value multiple of the first cell height.