公开(公告)号：US09136365B2

公开(公告)日：2015-09-15

申请号：US13716640

申请日：2012-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon Lee ,  Ki Se Kim

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/267 ,  H01L29/872 ,  H01L29/06 ,  H01L29/45 ,  H01L29/47 ,  H01L29/20

CPC classification number: H01L29/78 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66477 ,  H01L29/872

Abstract: A power device includes a substrate, a silicon carbide (SixC1-x) layer on one surface of the substrate, wherein 0

Abstract translation: 功率器件包括衬底，在衬底的一个表面上的碳化硅（SixC1-x）层，其中0

公开(公告)号：US09209253B2

公开(公告)日：2015-12-08

申请号：US13728157

申请日：2012-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon Lee ,  Ki Se Kim

IPC: H01L29/15 ,  H01L29/20 ,  H01L21/02 ,  H01L29/66 ,  H01L29/872 ,  H01L29/06

CPC classification number: H01L29/2003 ,  H01L21/02107 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/0649 ,  H01L29/66212 ,  H01L29/872

Abstract: A nitride based semiconductor device includes a first metallic junction layer, a Schottky junction layer on the first metallic junction layer, a first group III nitride semiconductor layer on the Schottky junction layer, a first insulating pattern layer on the first group III nitride semiconductor layer, the first insulating layer pattern including curved protrusions, a second group III nitride semiconductor layer laterally grown on the first group III nitride semiconductor layer, a first type group III nitride semiconductor layer on the second group III nitride semiconductor layer, the first type group III nitride semiconductor layer being simultaneously doped with aluminum (Al) and silicon (Si), an ohmic junction layer formed on the first type group III nitride semiconductor layer, a second metallic junction layer on the ohmic junction layer, and a metallic supporting substrate on the second metallic junction layer.

Abstract translation: 氮化物基半导体器件包括第一金属结层，第一金属结层上的肖特基结层，肖特基结层上的第一III族氮化物半导体层，第一III族氮化物半导体层上的第一绝缘图案层， 第一绝缘层图案包括弯曲突起，在第一III族氮化物半导体层上横向生长的第二III族氮化物半导体层，第二III族氮化物半导体层上的第一类型III族氮化物半导体层，第一类型III族氮化物 半导体层同时掺杂有铝（Al）和硅（Si），形成在第一类型III族氮化物半导体层上的欧姆结层，欧姆结层上的第二金属结层和第二金属支撑衬底 金属结层。