公开(公告)号：US09608631B2

公开(公告)日：2017-03-28

申请号：US14723614

申请日：2015-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Won Lee ,  Seung Jun Bae ,  Joon Young Park ,  Yong Cheol Bae

IPC: G11C7/00 ,  H03K19/00 ,  G11C7/10 ,  G11C29/02 ,  G11C29/50 ,  G11C5/14

CPC classification number: G11C7/12 ,  G11C5/147 ,  G11C7/1057 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50008 ,  G11C2207/2254 ,  H03K19/0005

Abstract: A semiconductor memory device includes a ZQ calibration unit configured to generate a pull-up VOH code according to a first target VOH proportional to a power supply voltage and an output driver configured to generate a data signal having a VOH proportional to the power supply voltage based on the pull-up VOH code, wherein VOH means “output high level voltage.”

公开(公告)号：US09954966B2

公开(公告)日：2018-04-24

申请号：US14806797

申请日：2015-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Hyuk Jang ,  Jae Hyun Park ,  Hey Young Park ,  Jong Kyu Bae ,  Yeo Rok Yoon ,  Ki Won Lee ,  Je Hyun Lee ,  Ki Young Lim ,  Jong Yeol Choi

IPC: G06F15/16 ,  H04L29/08 ,  H04L29/06

CPC classification number: H04L67/26 ,  H04L67/18 ,  H04L67/42

Abstract: A server is provided comprising a processor configured to: receive an indication of a location of a first device that is subscribed to a disaster notification service; in response to receiving a disaster alert, detect that the first device is located in an area associated with the disaster based on the indication of the location of the first device; identify a second device that has registered the first device as a friend; and transmit a first indication of the disaster to the first device and a second indication of the disaster to the second device.

公开(公告)号：US09543952B2

公开(公告)日：2017-01-10

申请号：US14460764

申请日：2014-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Won Lee

IPC: H03K19/0175 ,  H03K19/003 ,  G11C7/02 ,  G11C7/10 ,  G11C11/4096 ,  G11C5/04 ,  G11C29/02

CPC classification number: H03K19/017545 ,  G11C5/04 ,  G11C7/02 ,  G11C7/1069 ,  G11C11/4096 ,  G11C29/021 ,  G11C29/028 ,  G11C2207/105 ,  H03K19/00315

Abstract: A semiconductor memory device includes a ZQ calibration unit configured to generate an output high level voltage (VOH) code according to a VOH control code obtained from a result of comparing a reference voltage with a first VOH; and an output driver configured to generate a data signal having a second VOH determined by the VOH code. The VOH control code includes a pull-up VOH control code and a pull-down VOH control code and the VOH code includes a pull-up VOH code and a pull-down VOH code.

Abstract translation: 半导体存储器件包括：ZQ校准单元，被配置为根据从参考电压与第一VOH的比较结果获得的VOH控制码产生输出高电平电压（VOH）码; 以及输出驱动器，被配置为生成具有由所述VOH码确定的第二VOH的数据信号。 VOH控制代码包括上拉VOH控制代码和下拉VOH控制代码，并且VOH代码包括上拉VOH代码和下拉VOH代码。

公开(公告)号：US09947378B2

公开(公告)日：2018-04-17

申请号：US15729771

申请日：2017-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Won Lee ,  Seung Jun Bae ,  Joon Young Park ,  Yong Cheol Bae

IPC: G11C7/00 ,  G11C7/12 ,  H03K19/00

CPC classification number: G11C7/12 ,  G11C5/147 ,  G11C7/1057 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50008 ,  G11C2207/2254 ,  H03K19/0005

Abstract: A method of operating a memory controller includes: receiving a data signal from a memory device, wherein the data signal has an output high level voltage (VOH); determining a reference voltage according to the VOH; and comparing the data signal with the reference voltage to determine a received data value, wherein the VOH is proportional to a power supply voltage (VDDQ).

公开(公告)号：US09805774B2

公开(公告)日：2017-10-31

申请号：US15426603

申请日：2017-02-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Won Lee ,  Seung Jun Bae ,  Joon Young Park ,  Yong Cheol Bae

IPC: G11C7/00 ,  G11C7/12 ,  H03K19/00

CPC classification number: G11C7/12 ,  G11C5/147 ,  G11C7/1057 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50008 ,  G11C2207/2254 ,  H03K19/0005

Abstract: A semiconductor memory device includes a ZQ calibration unit configured to generate a pull-up VOH code according to a first target VOH proportional to a power supply voltage and an output driver configured to generate a data signal having a VOH proportional to the power supply voltage based on the pull-up VOH code, wherein VOH means “output high level voltage.”

公开(公告)号：US20150115999A1

公开(公告)日：2015-04-30

申请号：US14460764

申请日：2014-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Won Lee

IPC: H03K19/0175 ,  G11C11/4076 ,  G11C11/417 ,  H03K19/003

CPC classification number: H03K19/017545 ,  G11C5/04 ,  G11C7/02 ,  G11C7/1069 ,  G11C11/4096 ,  G11C29/021 ,  G11C29/028 ,  G11C2207/105 ,  H03K19/00315

Abstract: A semiconductor memory device includes a ZQ calibration unit configured to generate an output high level voltage (VOH) code according to a VOH control code obtained from a result of comparing a reference voltage with a first VOH; and an output driver configured to generate a data signal having a second VOH determined by the VOH code. The VOH control code includes a pull-up VOH control code and a pull-down VOH control code and the VOH code includes a pull-up VOH code and a pull-down VOH code.

Abstract translation: 半导体存储器件包括：ZQ校准单元，被配置为根据从参考电压与第一VOH进行比较的结果获得的VOH控制码产生输出高电平电压（VOH）代码; 以及输出驱动器，被配置为生成具有由所述VOH码确定的第二VOH的数据信号。 VOH控制代码包括上拉VOH控制代码和下拉VOH控制代码，并且VOH代码包括上拉VOH代码和下拉VOH代码。