公开(公告)号：US10008505B2

公开(公告)日：2018-06-26

申请号：US15198035

申请日：2016-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Noh Lee ,  Youngkuk Kim ,  Sangyeol Kang ,  Joonsoo Park ,  KiVin Im

IPC: H01L27/108

CPC classification number: H01L27/10855 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10888

Abstract: A method for manufacturing a semiconductor device may include forming contact pads spaced apart from each other in a first direction on a substrate and between first insulating patterns; forming first holes between the first insulating patterns and having bottom ends adjacent top surfaces of the contact pads; forming second holes between second insulating patterns and overlapping with partial portions of the first holes in a second direction perpendicular to the first direction; and forming a bottom electrode layer including first portions to cover the bottom ends of the first holes and sidewalls of the second holes. In forming the first and second holes, the first and second holes are formed simultaneously.