公开(公告)号：US20250087264A1

公开(公告)日：2025-03-13

申请号：US18958240

申请日：2024-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjin Kim ,  Jayang Yoon ,  Chiweon Yoon ,  Cheonan Lee ,  Kichang Jang

IPC: G11C11/4099 ,  G11C11/4074 ,  G11C11/408

Abstract: According to the present disclosure, a nonvolatile memory device may include an operational amplifier comparing a reference voltage with a voltage of a feedback node; a first feedback network circuit generating a first output voltage by dividing an input voltage in response to an output voltage of the operational amplifier, and transmitting a voltage corresponding to the first output voltage to the feedback node in response to a first feedback signal, a second feedback network circuit generating a second output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the second output voltage to the feedback node in response to a second feedback signal, and a third feedback network circuit generating a third output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the third output voltage to the feedback node in response to a third feedback signal.

公开(公告)号：US12190942B2

公开(公告)日：2025-01-07

申请号：US17863037

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjin Kim ,  Jayang Yoon ,  Chiweon Yoon ,  Cheonan Lee ,  Kichang Jang

IPC: G11C11/4099 ,  G11C11/4074 ,  G11C11/408

Abstract: According to the present disclosure, a nonvolatile memory device may include an operational amplifier comparing a reference voltage with a voltage of a feedback node; a first feedback network circuit generating a first output voltage by dividing an input voltage in response to an output voltage of the operational amplifier, and transmitting a voltage corresponding to the first output voltage to the feedback node in response to a first feedback signal, a second feedback network circuit generating a second output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the second output voltage to the feedback node in response to a second feedback signal, and a third feedback network circuit generating a third output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the third output voltage to the feedback node in response to a third feedback signal.

公开(公告)号：US20230146885A1

公开(公告)日：2023-05-11

申请号：US17863037

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjin Kim ,  Jayang Yoon ,  Chiweon Yoon ,  Cheonan Lee ,  Kichang Jang

IPC: G11C11/4099 ,  G11C11/4074 ,  G11C11/408

CPC classification number: G11C11/4099 ,  G11C11/4074 ,  G11C11/4085

Abstract: According to the present disclosure, a nonvolatile memory device may include an operational amplifier comparing a reference voltage with a voltage of a feedback node; a first feedback network circuit generating a first output voltage by dividing an input voltage in response to an output voltage of the operational amplifier, and transmitting a voltage corresponding to the first output voltage to the feedback node in response to a first feedback signal, a second feedback network circuit generating a second output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the second output voltage to the feedback node in response to a second feedback signal, and a third feedback network circuit generating a third output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the third output voltage to the feedback node in response to a third feedback signal.