公开(公告)号：US20230131215A1

公开(公告)日：2023-04-27

申请号：US17863741

申请日：2022-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunhwi Cho ,  Jinkyu Kim ,  Myunggil Kang ,  Dongwon Kim ,  Kisung Suh

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/78

Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor structure extending from a substrate in a first direction and having first and second regions; forming a sacrificial gate pattern intersecting the first region of the semiconductor structure and extending in a second direction perpendicular to the first direction; reducing a width in the second direction of the second region of the semiconductor structure exposed to at least one side of the sacrificial gate pattern; forming at least one recess portion by removing a portion of the second region of the semiconductor structure; forming one or more source/drain regions in the recess portion of the semiconductor structure on at least one side of the sacrificial gate pattern; forming at least one gap region by removing the sacrificial gate pattern; and forming a gate structure by depositing a gate dielectric layer and a gate electrode in the gap region.