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公开(公告)号:US20250015134A1
公开(公告)日:2025-01-09
申请号:US18676686
申请日:2024-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changju Moon , Donggwan Shin , Yonghee Park , Myunggil Kang , Jeongho Yoo
IPC: H01L29/08 , H01L29/423 , H01L29/66 , H01L29/78
Abstract: A semiconductor device includes an active region that extends on the substrate in a first direction; a plurality of semiconductor layers disposed on the active region and that are spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate; a gate structure disposed on the substrate and that crosses the active region and the plurality of semiconductor layers, surrounds each of the plurality of semiconductor layers, and extends in a second direction; a source/drain region disposed on at least one side of the gate structure and in contact with a portion of the plurality of semiconductor layers; and an epitaxial layer that is spaced apart from an uppermost semiconductor layer, is disposed below the source/drain region and between the active region and the source/drain region, and is in contact with at least a portion of the side surfaces of the lowermost semiconductor layer.
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公开(公告)号:US20220406919A1
公开(公告)日:2022-12-22
申请号:US17575856
申请日:2022-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Beomjin PARK , Myunggil Kang , Dongwon Kim , Keunhwi Cho
Abstract: A semiconductor device includes: an active region extending on a substrate in a first direction; a plurality of semiconductor layers spaced apart from each other vertically on the active region, including a lower semiconductor layer and an uppermost semiconductor layer disposed above the lower semiconductor layer and having a thickness greater than that of the lower semiconductor layer; a gate structure extending on the substrate in a second direction, perpendicular to the first direction, and including a gate electrode at least partially surrounding each of the plurality of semiconductor layers; a spacer structure disposed on both sidewalls of the gate structure; and source/drain regions disposed on the active region on both sides of the gate structure and contacting the plurality of semiconductor layers.
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公开(公告)号:US12274092B2
公开(公告)日:2025-04-08
申请号:US18406345
申请日:2024-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Byounghak Hong , Seunghyun Song , Myunggil Kang , Kang-Ill Seo
IPC: H10D86/00 , G01R27/02 , H01L21/66 , H01L23/535 , H10D30/67 , H10D84/01 , H10D84/03 , H10D84/85 , H10D88/00
Abstract: Resistance measuring structures for a stacked integrated circuit device are provided. The resistance measuring structures may include a first Complementary Field Effect Transistor (CFET) stack, a second CFET stack, and a conductive connection. The first CFET may include a first upper transistor that includes a first upper drain region and a first lower transistor that is between the substrate and the first upper transistor and includes a first lower drain region. The second CFET may include a second upper transistor that includes a second upper drain region and a second lower transistor that is between the substrate and the second upper transistor and includes a second lower drain region. The conductive connection may electrically connect the first upper drain region and the second upper drain region.
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公开(公告)号:US20230131215A1
公开(公告)日:2023-04-27
申请号:US17863741
申请日:2022-07-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Keunhwi Cho , Jinkyu Kim , Myunggil Kang , Dongwon Kim , Kisung Suh
IPC: H01L29/66 , H01L21/8234 , H01L29/417 , H01L29/78
Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor structure extending from a substrate in a first direction and having first and second regions; forming a sacrificial gate pattern intersecting the first region of the semiconductor structure and extending in a second direction perpendicular to the first direction; reducing a width in the second direction of the second region of the semiconductor structure exposed to at least one side of the sacrificial gate pattern; forming at least one recess portion by removing a portion of the second region of the semiconductor structure; forming one or more source/drain regions in the recess portion of the semiconductor structure on at least one side of the sacrificial gate pattern; forming at least one gap region by removing the sacrificial gate pattern; and forming a gate structure by depositing a gate dielectric layer and a gate electrode in the gap region.
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公开(公告)号:US20220115539A1
公开(公告)日:2022-04-14
申请号:US17560804
申请日:2021-12-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sanghoon Lee , Krishna Bhuwalka , Myunggil Kang , Kyoungmin Choi
IPC: H01L29/78 , H01L27/088 , H01L21/8234 , H01L29/06 , H01L29/10 , H01L29/786 , H01L29/423
Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure having a plurality of first semiconductor patterns and a plurality of second semiconductor patterns alternately stacked on a substrate, and extending in a first direction. The semiconductor device includes a semiconductor cap layer on an upper surface of the fin structure, and extending along opposite side surfaces of the fin structure in a second direction crossing the first direction. The semiconductor device includes a gate electrode on the semiconductor cap layer, and extending in the second direction. The semiconductor device includes a gate insulating film between the semiconductor cap layer and the gate electrode. Moreover, the semiconductor device includes a source/drain region connected to the fin structure. The plurality of first semiconductor patterns include silicon germanium (SiGe) having a germanium (Ge) content in a range of 25% to 35%, and the plurality of second semiconductor patterns include silicon (Si).
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公开(公告)号:US11217578B2
公开(公告)日:2022-01-04
申请号:US16911795
申请日:2020-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woocheol Shin , Myunggil Kang
IPC: H01L27/06 , H01L49/02 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/786 , H01L21/02 , H01L29/66
Abstract: A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a plurality of channel layers spaced apart from each other in a vertical direction on the active region and connected to the doped region, a first gate electrode and a second gate electrode extending in the second horizontal direction intersecting the first horizontal direction and surrounding the plurality of channel layers, a first contact plug and a second contact plug in contact with an upper surface of the doped region. The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode.
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公开(公告)号:US20240321961A1
公开(公告)日:2024-09-26
申请号:US18613338
申请日:2024-03-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jongsu Kim , Myunggil Kang , Dongwon Kim , Beomjin Park , Inhyun Song , Hyumin Yoo , Yujin Jeon
IPC: H01L29/06 , H01L27/092 , H01L29/08 , H01L29/423 , H01L29/775 , H01L29/786
CPC classification number: H01L29/0673 , H01L27/092 , H01L29/0847 , H01L29/42392 , H01L29/775 , H01L29/78696
Abstract: An integrated circuit device includes, a first nano-sheet stack including a plurality of nano-sheets arranged on a fin-type active region extending in a first horizontal direction, a gate line extending in a second horizontal direction on the fin-type active region, a vertical structure contacting the plurality of nano-sheets, and a first gate dielectric layer disposed between the gate line and the plurality of nano-sheets and between the gate line and the vertical structure, wherein the gate line includes a first sub-gate portion disposed under each of the plurality of nano-sheets, the first gate dielectric layer includes a first portion disposed between the gate line and the plurality of nano-sheets, and a second portion disposed between the first sub-gate portion and the vertical structure, and a thickness of the second portion in the second horizontal direction is greater than a thickness of the first portion in the vertical direction.
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公开(公告)号:US11948942B2
公开(公告)日:2024-04-02
申请号:US18122253
申请日:2023-03-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Minhee Choi , Keunhwi Cho , Myunggil Kang , Seokhoon Kim , Dongwon Kim , Pankwi Park , Dongsuk Shin
IPC: H01L29/08 , H01L21/02 , H01L27/092 , H01L29/06 , H01L29/161 , H01L29/167 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/78
CPC classification number: H01L27/0924 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L29/0673 , H01L29/0847 , H01L29/161 , H01L29/167 , H01L29/42392 , H01L29/66439 , H01L29/66795 , H01L29/775 , H01L29/7851
Abstract: An integrated circuit device includes a fin-type active area along a first horizontal direction on a substrate, a device isolation layer on opposite sidewalls of the fin-type active area, a gate structure along a second horizontal direction crossing the first horizontal direction, the gate structure being on the fin-type active area and on the device isolation layer, and a source/drain area on the fin-type active area, the source/drain area being adjacent to the gate structure, and including an outer blocking layer, an inner blocking layer, and a main body layer sequentially stacked on the fin-type active area, and each of the outer blocking layer and the main body layer including a Si1−xGex layer, where x≠0, and the inner blocking layer including a Si layer.
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公开(公告)号:US11715735B2
公开(公告)日:2023-08-01
申请号:US17564593
申请日:2021-12-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woocheol Shin , Myunggil Kang
IPC: H01L27/06 , H01L21/02 , H01L49/02 , H01L29/06 , H01L29/786 , H01L29/423 , H01L29/66 , H01L29/417
CPC classification number: H01L27/0629 , H01L21/02532 , H01L21/02603 , H01L28/20 , H01L29/0673 , H01L29/41733 , H01L29/42392 , H01L29/66545 , H01L29/66553 , H01L29/66742 , H01L29/78618 , H01L29/78696
Abstract: A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a plurality of channel layers spaced apart from each other in a vertical direction on the active region and connected to the doped region, a first gate electrode and a second gate electrode extending in the second horizontal direction intersecting the first horizontal direction and surrounding the plurality of channel layers, a first contact plug and a second contact plug in contact with an upper surface of the doped region. The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode.
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公开(公告)号:US11705521B2
公开(公告)日:2023-07-18
申请号:US17560804
申请日:2021-12-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sanghoon Lee , Krishna Bhuwalka , Myunggil Kang , Kyoungmin Choi
IPC: H01L29/423 , H01L29/786 , H01L29/06 , H01L29/10 , H01L27/088 , H01L21/8234 , H01L29/78
CPC classification number: H01L29/7851 , H01L21/823431 , H01L27/0886 , H01L29/0673 , H01L29/1054 , H01L29/42392 , H01L29/78696
Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure having a plurality of first semiconductor patterns and a plurality of second semiconductor patterns alternately stacked on a substrate, and extending in a first direction. The semiconductor device includes a semiconductor cap layer on an upper surface of the fin structure, and extending along opposite side surfaces of the fin structure in a second direction crossing the first direction. The semiconductor device includes a gate electrode on the semiconductor cap layer, and extending in the second direction. The semiconductor device includes a gate insulating film between the semiconductor cap layer and the gate electrode. Moreover, the semiconductor device includes a source/drain region connected to the fin structure. The plurality of first semiconductor patterns include silicon germanium (SiGe) having a germanium (Ge) content in a range of 25% to 35%, and the plurality of second semiconductor patterns include silicon (Si).
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