公开(公告)号：US10290509B2

公开(公告)日：2019-05-14

申请号：US15443370

申请日：2017-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-Gun Kim ,  Sangmin Lee ,  Sinhae Do ,  Seok-Won Cho ,  Taeseop Choi ,  Kon Ha

IPC: H01L21/311 ,  G03F7/20 ,  H01L21/033 ,  H01L21/308 ,  H01L27/108

Abstract: Example embodiments relate to a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes stacking on a substrate an etching target layer, a first mask layer, and a photoresist layer, irradiating extreme ultraviolet (EUV) radiation on the photoresist layer to form a photoresist pattern, patterning the first mask layer to form a first mask pattern using the photoresist pattern as an etching mask, and patterning the etching target layer to form a target pattern using the first mask pattern as an etching mask. The first mask layer includes at least one of a silicon layer and a titanium oxide layer.

公开(公告)号：US10937788B2

公开(公告)日：2021-03-02

申请号：US16809913

申请日：2020-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Gun Kim ,  Sang-min Lee ,  Tae-Seop Choi ,  Kon Ha ,  Seung-jae Lee

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device includes a substrate with an active region, a plurality of conductive line structures on the substrate, an insulating layer separating the plurality of conductive line structures from the substrate, a contact plug between every two adjacent conductive line structures, an insulating spacer structure between each conductive line structure and a corresponding contact plug, a landing pad connected to each contact plug, and a landing pad insulation pattern having an asymmetrical shape based on a vertical axis of the landing pad that extends along a normal to the substrate. The landing pad insulation pattern includes a first portion overlapping the conductive line structures and a second portion overlapping the contact plug, the first and second portions being on opposite sides of the vertical axis.

公开(公告)号：US10224332B2

公开(公告)日：2019-03-05

申请号：US15598570

申请日：2017-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-gun Kim ,  Sang-min Lee ,  Tae-seop Choi ,  Kon Ha ,  Seung-jae Lee

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device includes a substrate with an active region, a plurality of conductive line structures on the substrate, an insulating layer separating the plurality of conductive line structures from the substrate, a contact plug between every two adjacent conductive line structures, an insulating spacer structure between each conductive line structure and a corresponding contact plug, a landing pad connected to each contact plug, and a landing pad insulation pattern having an asymmetrical shape based on a vertical axis of the landing pad that extends along a normal to the substrate. The landing pad insulation pattern includes a first portion overlapping the conductive line structures and a second portion overlapping the contact plug, the first and second portions being on opposite sides of the vertical axis.