公开(公告)号：US20250079393A1

公开(公告)日：2025-03-06

申请号：US18748354

申请日：2024-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Cheon PARK ,  Un-Byoung KANG ,  Ku Young KIM ,  Jun Woo MYUNG ,  Seung-Jin LEE ,  Ji-Seok HONG

IPC: H01L23/00 ,  H01L23/28 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065 ,  H10B80/00

Abstract: A semiconductor package includes: a first semiconductor chip including a first substrate and a first through electrode passing through the first substrate, wherein the first substrate has a first active surface and a first non-active surface; a chip structure including a plurality of second semiconductor chips stacked on the first semiconductor chip, wherein each second semiconductor chip includes a second substrate and a second through electrode passing through the second substrate; and a third semiconductor chip disposed on the chip structure, and including a third substrate, wherein the first substrate has a first width and a first thickness, wherein the second substrate has a second width and a second thickness, and the third substrate has a third width and a third thickness, wherein the third thickness is thicker than the second thickness, and the third width is greater than the second width.

公开(公告)号：US20240413104A1

公开(公告)日：2024-12-12

申请号：US18425173

申请日：2024-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Cheon PARK ,  Ji-Seok HONG ,  Un-Byoung KANG ,  Ku Young KIM

IPC: H01L23/00 ,  H01L23/528 ,  H01L25/18 ,  H10B80/00

Abstract: There is provided a semiconductor device with improved product reliability. The semiconductor device includes a substrate, a structure on the substrate and including multilayer metal patterns and multilayer insulating layers, and a pad layer on the structure and including a plurality of bonding pads, wherein a plurality of uppermost patterns at an uppermost layer among the multilayer metal patterns include electrode patterns for transferring signals and alleviation patterns that do not transfer the signals, a first ratio of the alleviation patterns within a first reference shape at a first distance from an edge of the structure is greater than a second ratio of the alleviation patterns within a second reference shape at a second distance from the edge of the structure, and the first distance is greater than the second distance.

公开(公告)号：US20250062177A1

公开(公告)日：2025-02-20

申请号：US18623860

申请日：2024-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Min LEE ,  Sang-Sick PARK ,  Un-Byoung KANG ,  Ku Young KIM

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

Abstract: A semiconductor package includes a base substrate, a first semiconductor chip on the base substrate, a second semiconductor chip on the first semiconductor chip, an upper pad on an upper surface of the first semiconductor chip, a lower pad on a lower surface of the second semiconductor chip that faces the upper surface of the first semiconductor chip, a connecting bump between the upper pad and the lower pad, a lower film on the upper surface of the first semiconductor chip, and on a side surface of the upper pad and an upper film between the lower film and the lower surface of the second semiconductor chip, and on a side surface of the lower pad, wherein the lower film includes a thermosetting material, the upper film includes a photocurable material, and a side surface of the lower film protrudes outward beyond a side surface of the first semiconductor chip.