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公开(公告)号:US20240030214A1
公开(公告)日:2024-01-25
申请号:US18480310
申请日:2023-10-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sang Cheon PARK , Dae-Woo Kim , Taehun Kim , Hyuekjae Lee
IPC: H01L25/18 , H01L23/31 , H01L23/48 , H01L23/498
CPC classification number: H01L25/18 , H01L23/3128 , H01L23/481 , H01L23/49827 , H01L23/49822
Abstract: A semiconductor package includes a redistribution substrate, a first memory chip provided on the redistribution substrate, the first memory chip comprising a first base layer, a first circuit layer provided on a top surface of the first base layer, and a first via penetrating the first base layer and connected to the first circuit layer and the redistribution substrate, a logic chip provided on the first memory chip, and a first molding layer surrounding the first memory chip. An outer side surface of the first molding layer is coplanar with a side surface of the logic chip. At an interface of the logic chip and the first memory chip, a first chip pad provided in the first circuit layer of the first memory chip and a second chip pad of the logic chip are formed of the same material and constitute one body.
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公开(公告)号:US20250079393A1
公开(公告)日:2025-03-06
申请号:US18748354
申请日:2024-06-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sang Cheon PARK , Un-Byoung KANG , Ku Young KIM , Jun Woo MYUNG , Seung-Jin LEE , Ji-Seok HONG
IPC: H01L23/00 , H01L23/28 , H01L23/48 , H01L23/498 , H01L25/065 , H10B80/00
Abstract: A semiconductor package includes: a first semiconductor chip including a first substrate and a first through electrode passing through the first substrate, wherein the first substrate has a first active surface and a first non-active surface; a chip structure including a plurality of second semiconductor chips stacked on the first semiconductor chip, wherein each second semiconductor chip includes a second substrate and a second through electrode passing through the second substrate; and a third semiconductor chip disposed on the chip structure, and including a third substrate, wherein the first substrate has a first width and a first thickness, wherein the second substrate has a second width and a second thickness, and the third substrate has a third width and a third thickness, wherein the third thickness is thicker than the second thickness, and the third width is greater than the second width.
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公开(公告)号:US20240170459A1
公开(公告)日:2024-05-23
申请号:US18502569
申请日:2023-11-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Bo Hee HWANG , Young Kun JEE , Sang Cheon PARK
IPC: H01L25/065 , H01L23/00 , H01L23/498
CPC classification number: H01L25/0657 , H01L23/49816 , H01L23/49822 , H01L24/08 , H01L24/97 , H01L2224/97 , H01L2924/1436 , H10B80/00
Abstract: A semiconductor package may include a package substrate, a stack die including a plurality of dies are stacked on the package substrate, a gap fill insulating layer on an upper surface of the stack die, a top dummy die on the gap fill insulating layer, and a molding portion surrounding the stack die having the top dummy die thereon.
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公开(公告)号:US20240413104A1
公开(公告)日:2024-12-12
申请号:US18425173
申请日:2024-01-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang Cheon PARK , Ji-Seok HONG , Un-Byoung KANG , Ku Young KIM
IPC: H01L23/00 , H01L23/528 , H01L25/18 , H10B80/00
Abstract: There is provided a semiconductor device with improved product reliability. The semiconductor device includes a substrate, a structure on the substrate and including multilayer metal patterns and multilayer insulating layers, and a pad layer on the structure and including a plurality of bonding pads, wherein a plurality of uppermost patterns at an uppermost layer among the multilayer metal patterns include electrode patterns for transferring signals and alleviation patterns that do not transfer the signals, a first ratio of the alleviation patterns within a first reference shape at a first distance from an edge of the structure is greater than a second ratio of the alleviation patterns within a second reference shape at a second distance from the edge of the structure, and the first distance is greater than the second distance.
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公开(公告)号:US20240194639A1
公开(公告)日:2024-06-13
申请号:US18220053
申请日:2023-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sang Cheon PARK , Chungsun Lee , Soohwan Lee , Young Kun Jee
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/498 , H01L23/538 , H10B80/00
CPC classification number: H01L25/0652 , H01L23/3128 , H01L23/49811 , H01L23/5385 , H01L24/05 , H01L24/08 , H01L24/80 , H10B80/00 , H01L2224/05647 , H01L2224/08145 , H01L2224/08225 , H01L2224/80379
Abstract: Provided is a semiconductor chip stack structure including a plurality of first semiconductor chip dies stacked in a vertical direction, and one or more second semiconductor chip dies between adjacent first semiconductor chip dies among the plurality of first semiconductor chip dies, wherein a thickness of each second semiconductor chip die of the one or more second semiconductor chip dies is greater than a thickness of each first semiconductor chip die of the plurality of first semiconductor chip dies in the vertical direction.
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公开(公告)号:US20220068829A1
公开(公告)日:2022-03-03
申请号:US17199703
申请日:2021-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang Cheon PARK , Young Min LEE , Dae-Woo KIM , Hyuek Jae LEE
IPC: H01L23/544 , H01L23/538 , H01L25/065
Abstract: A semiconductor package includes a substrate including a first semiconductor chip including a first wiring structure, a first bonding pad, and a first alignment key on the first wiring structure to be spaced apart in a first direction, a second semiconductor chip including a second wiring structure, a second bonding pad on the second wiring structure and connected to the first bonding pad, and a second alignment key on the second wiring structure to be spaced apart from the second bonding pad and not overlapping the first alignment key in the second direction, the first wiring structure including a first wiring pattern connected to the first bonding pad and not overlapping the first and second alignment keys in the second direction, and the second wiring structure including a second wiring pattern connected to the second bonding pad and not overlapping the first and second alignment keys in the second direction.
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公开(公告)号:US20230395523A1
公开(公告)日:2023-12-07
申请号:US18234914
申请日:2023-08-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang Cheon PARK , Young Min LEE , Dae-Woo KIM , Hyuek Jae LEE
IPC: H01L23/544 , H01L25/065 , H01L23/538
CPC classification number: H01L23/544 , H01L25/0657 , H01L23/5386 , H01L23/5385
Abstract: A semiconductor package includes a substrate including a first semiconductor chip including a first wiring structure, a first bonding pad, and a first alignment key on the first wiring structure to be spaced apart in a first direction, a second semiconductor chip including a second wiring structure, a second bonding pad on the second wiring structure and connected to the first bonding pad, and a second alignment key on the second wiring structure to be spaced apart from the second bonding pad and not overlapping the first alignment key in the second direction, the first wiring structure including a first wiring pattern connected to the first bonding pad and not overlapping the first and second alignment keys in the second direction, and the second wiring structure including a second wiring pattern connected to the second bonding pad and not overlapping the first and second alignment keys in the second direction.
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公开(公告)号:US20220165722A1
公开(公告)日:2022-05-26
申请号:US17381985
申请日:2021-07-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sang Cheon PARK , Dae-Woo Kim , Taehun Kim , Hyuekjae Lee
IPC: H01L25/18 , H01L23/31 , H01L23/498 , H01L23/48
Abstract: A semiconductor package includes a redistribution substrate, a first memory chip provided on the redistribution substrate, the first memory chip comprising a first base layer, a first circuit layer provided on a top surface of the first base layer, and a first via penetrating the first base layer and connected to the first circuit layer and the redistribution substrate, a logic chip provided on the first memory chip, and a first molding layer surrounding the first memory chip. An outer side surface of the first molding layer is coplanar with a side surface of the logic chip. At an interface of the logic chip and the first memory chip, a first chip pad provided in the first circuit layer of the first memory chip and a second chip pad of the logic chip are formed of the same material and constitute one body.
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公开(公告)号:US20170110388A1
公开(公告)日:2017-04-20
申请号:US15290899
申请日:2016-10-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang Cheon PARK , Won Il LEE , Chajea JO , Taeje CHO
IPC: H01L23/48 , H01L23/522 , H01L23/13 , H01L23/00 , H01L25/065 , H01L23/528 , H01L23/532
CPC classification number: H01L23/481 , H01L23/13 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L24/03 , H01L24/05 , H01L25/0657 , H01L2224/0346 , H01L2224/0401 , H01L2224/05025 , H01L2224/05147 , H01L2224/05556 , H01L2224/05559 , H01L2224/05568 , H01L2224/0557 , H01L2224/05571 , H01L2224/05647 , H01L2224/06181 , H01L2224/13023 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13117 , H01L2224/1312 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/16238 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06544 , H01L2225/06565 , H01L2924/01058 , H01L2924/15311 , H01L2924/00014 , H01L2924/00012 , H01L2924/014
Abstract: A semiconductor device includes a semiconductor chip having an active surface and a non-active surface opposite to the active surface, an upper insulating layer provided on the non-active surface of semiconductor chip, and a via and a connection pad penetrating the semiconductor chip and the upper insulating layer, respectively. The connection pad has a first surface exposed outside the upper insulating layer and a second surface opposite to the first surface and facing the semiconductor chip. The first surface of the connection pad is coplanar with an upper surface of the upper insulating layer.
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