公开(公告)号：US09721762B2

公开(公告)日：2017-08-01

申请号：US14473554

申请日：2014-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyounghoon Han ,  Byungbok Kang ,  Namjun Kang ,  Tae-Hwa Kim ,  Junghyun Cho ,  Jae-Hyun Lee

IPC: G06F19/00 ,  H01J37/32 ,  G05B23/02

CPC classification number: H01J37/32394 ,  G05B23/0283 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/86

Abstract: Provided are a method and a system for managing semiconductor manufacturing equipment. The method may be performed using an equipment computer and may include ordering to perform a preventive maintenance to a chamber and parts in the chamber, monitoring a result of the preventive maintenance to the chamber and the parts, and performing a manufacturing process using plasma reaction in the chamber, if the result of the preventive maintenance is normal. The monitoring the result of the preventive maintenance may include a pre-screening method monitoring the result of the preventive maintenance using electric reflection coefficients obtained from the chamber and the parts without using the plasma reaction.

公开(公告)号：US09859163B2

公开(公告)日：2018-01-02

申请号：US15235175

申请日：2016-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyounghoon Han ,  Junho Yoon ,  Kisoo Chang

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L21/311 ,  H01L29/78

CPC classification number: H01L21/823431 ,  H01L21/31144 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76897 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for manufacturing a semiconductor device includes forming gate structures spaced apart from each other on a substrate, gate spacers covering sidewalls of the gate structures, and an interlayer insulating layer covering the gate spacers, forming a contact hole that penetrates the interlayer insulating layer to expose a sidewall of at least one of the gate spacers, forming a sacrificial gap-fill pattern filling a lower portion of the contact hole, forming a contact spacer on a sidewall of the contact hole having the sacrificial gap-fill pattern, and forming a contact filling the contact hole after removing the sacrificial gap-fill pattern.