公开(公告)号：US10081864B2

公开(公告)日：2018-09-25

申请号：US13417226

申请日：2012-03-10

申请人： Ronald Stevens ,  Gabriel Ormonde ,  James Mitchener

发明人： Ronald Stevens ,  Gabriel Ormonde ,  James Mitchener

IPC分类号： C23C16/50 ,  C23C16/04 ,  A61L2/14 ,  C23C16/30 ,  C23C16/40 ,  C23C16/509 ,  H01J37/32

CPC分类号： C23C16/045 ,  A61L2/14 ,  A61L2202/23 ,  C23C16/308 ,  C23C16/401 ,  C23C16/403 ,  C23C16/5093 ,  H01J37/32082 ,  H01J37/32394 ,  H01J37/32403 ,  H01J37/32431 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596

摘要： An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.

公开(公告)号：US20170051393A1

公开(公告)日：2017-02-23

申请号：US15240253

申请日：2016-08-18

申请人： Korea Institute of Science and Technology

发明人： Seung Hee HAN ,  Se Hoon AN ,  Geun Hyuk LEE ,  In Seol SONG ,  Seong Woo JANG

IPC分类号： C23C14/16 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC分类号： C23C14/165 ,  C23C14/046 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32394 ,  H01J37/32669 ,  H01J37/3405 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3467

摘要： An apparatus and a method for coating an inner wall of a metal tube are provided. The apparatus for coating an inner wall of a metal tube includes mounting posts on which both end openings of a metal tube are mounted and configured to block the inside of the metal tube from the ambient air so that a pressure in the metal tube is adjustable by the vacuum exhaust and inflow of process gases, a sputtering target metal tube installed inside the metal tube coaxially with the metal tube, a pulse electromagnet installed around an outside perimeter of the metal tube coaxially with the metal tube to apply a pulse magnetic field in an axial direction of the metal tube, an electromagnetic pulse power supply unit configured to apply pulse power to the pulse electromagnet, and a sputtering pulse power supply unit configured to synchronize a negative high-voltage pulse with the pulse power applied to the pulse electromagnet and apply to the sputtering target metal tube.

摘要翻译： 提供一种用于涂覆金属管内壁的装置和方法。 用于涂覆金属管的内壁的装置包括安装柱，其上安装金属管的两个端部开口并且构造成将金属管的内部与周围空气阻挡，使得金属管中的压力可由 真空排气和工艺气体的流入，与金属管同轴地安装在金属管内的溅射靶金属管，安装在与金属管同轴的金属管的外周周围的脉冲电磁体，以将脉冲磁场施加到 所述电磁脉冲电源单元被配置为向所述脉冲电磁体施加脉冲电力;以及溅射脉冲电源单元，被配置为使负高压脉冲与施加到所述脉冲电磁体的脉冲功率同步并应用 到溅射靶金属管。

公开(公告)号：US09502233B2

公开(公告)日：2016-11-22

申请号：US14386223

申请日：2013-03-22

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Atsushi Sano ,  Masayuki Asai ,  Masahiro Yonebayashi

IPC分类号： H01L21/02 ,  C23C16/44 ,  H01J37/32

CPC分类号： H01L21/022 ,  C23C16/4405 ,  H01J37/32394 ,  H01J37/32862 ,  H01L21/0217

摘要： In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the processing chamber; a substrate carry-out process for carrying the film laminated substrate out from the processing chamber; an etching process for supplying an etching gas into the processing chamber while the substrate is not in the processing chamber after the substrate carry-out process. The etching process includes a first cleaning process for supplying a fluorine-containing gas activated by plasma excitation into the processing chamber as an etching gas; and a second cleaning process for supplying a fluorine-containing gas activated by heat into the processing chamber as an etching gas.

摘要翻译： 为了延长成膜装置的气体净化循环，本发明的半导体装置的制造方法包括：将基板搬送到处理室内的基板搬运工序; 用于在处理室中的基板上层叠至少两种类型的膜的成膜方法; 用于将膜层叠基板从处理室输送出去的基板搬运工序; 在衬底进行处理之后衬底不在处理室中的情况下，将蚀刻气体供应到处理室中的蚀刻工艺。 蚀刻工艺包括用于将作为蚀刻气体的等离子体激发而激活的含氟气体供给至处理室的第一清洗处理; 以及用于将作为蚀刻气体的加热活化的含氟气体供给到处理室中的第二清洗工序。

公开(公告)号：US20150198944A1

公开(公告)日：2015-07-16

申请号：US14473554

申请日：2014-08-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： KYOUNGHOON HAN ,  BYUNGBOK KANG ,  NAMJUN KANG ,  TAE-HWA KIM ,  JUNGHYUN CHO ,  JAE-HYUN LEE

IPC分类号： G05B19/418

CPC分类号： H01J37/32394 ,  G05B23/0283 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/86

摘要： Provided are a method and a system for managing semiconductor manufacturing equipment. The method may be performed using an equipment computer and may include ordering to perform a preventive maintenance to a chamber and parts in the chamber, monitoring a result of the preventive maintenance to the chamber and the parts, and performing a manufacturing process using plasma reaction in the chamber, if the result of the preventive maintenance is normal. The monitoring the result of the preventive maintenance may include a pre-screening method monitoring the result of the preventive maintenance using electric reflection coefficients obtained from the chamber and the parts without using the plasma reaction.

摘要翻译： 提供了一种用于管理半导体制造设备的方法和系统。 该方法可以使用设备计算机执行，并且可以包括对腔室和腔室中的部件进行预防性维护的顺序，监测对腔室和部件的预防性维护的结果，以及使用等离子体反应进行制造过程 如果预防性维护的结果是正常的话。 监视预防性维护的结果可以包括使用从腔室和部件获得的电反射系数来监视预防性维护的结果的预筛选方法，而不使用等离子体反应。

公开(公告)号：US20150059910A1

公开(公告)日：2015-03-05

申请号：US14466186

申请日：2014-08-22

申请人： YOUTEC CO., LTD.

发明人： Yuuji HONDA ,  Norio ARAMAKI

IPC分类号： H01J37/32 ,  C23C16/27 ,  F16L9/133 ,  C23C16/44

CPC分类号： H01J37/32394 ,  C23C16/045 ,  C23C16/26 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32577 ,  H01J2237/3321

摘要： To provide a plasma CVD apparatus capable of forming a thin film on the inner surface of a pipe even without a vacuum vessel. An aspect of the present invention is a plasma CVD apparatus including a first member sealing an end of a pipe; a second member sealing the other end of the pipe; a gas introduction mechanism that is connected to the first member and that introduces a raw material gas into the pipe; an exhausting mechanism that is connected to the second member and that vacuum-exhausts the inside of the pipe; an electrode disposed in the pipe; and a high-frequency power.

摘要翻译： 提供即使没有真空容器也能够在管的内表面上形成薄膜的等离子体CVD装置。 本发明的一个方面是等离子体CVD装置，其包括密封管的端部的第一构件; 密封管的另一端的第二构件; 气体引入机构，其连接到所述第一构件，并且将原料气体引入所述管中; 排气机构，其连接到第二构件并且真空排出管道的内部; 设置在管中的电极; 和高频电源。

公开(公告)号：US20110151141A1

公开(公告)日：2011-06-23

申请号：US12970183

申请日：2010-12-16

申请人： Deepak Upadhyaya ,  Karthik Boinapally ,  William J. Boardman ,  Matthew MaMoody ,  Thomas B. Casserly ,  Pankaj Jyoti Hazarika ,  Duc Doan

发明人： Deepak Upadhyaya ,  Karthik Boinapally ,  William J. Boardman ,  Matthew MaMoody ,  Thomas B. Casserly ,  Pankaj Jyoti Hazarika ,  Duc Doan

IPC分类号： C23C16/503 ,  C23C16/455 ,  C23C16/458 ,  C23C16/515 ,  C23C16/52 ,  C23C16/28

CPC分类号： H01J37/32568 ,  C23C16/045 ,  C23C16/26 ,  C23C16/503 ,  H01J37/32394 ,  H01J37/32449 ,  H01J37/32577 ,  H01J37/32596 ,  Y10T428/13

摘要： A method and apparatus for plasma enhanced chemical vapor deposition to an interior region of a hollow, tubular, high aspect ratio workpiece are disclosed. A plurality of anodes are disposed in axially spaced apart arrangement, to the interior of the workpiece. A process gas is introduced into the region. A respective individualized DC or pulsed DC bias is applied to each of the anodes. The bias excites the process gas into a plasma. The workpiece is biased in a hollow cathode arrangement. Pressure is controlled in the interior region to maintain the plasma. An elongated support tube arranges the anodes, and receives a process gas tube. A current splitter provides a respective selected proportion of a total current to each anode. One or more notch diffusers or chamber diffusers may diffuse the process gas or a plasma moderating gas. Plasma impedance and distribution may be controlled using various means.

摘要翻译： 公开了一种用于将等离子体增强的化学气相沉积到中空管状高纵横比工件的内部区域的方法和装置。 多个阳极以轴向间隔布置的方式设置在工件的内部。 将工艺气体引入该区域。 各个单独的DC或脉冲DC偏压被施加到每个阳极。 偏压将工艺气体激发成等离子体。 工件被偏压在空心阴极装置中。 在内部区域中控制压力以维持等离子体。 细长的支撑管布置阳极，并接收处理气体管。 电流分流器为每个阳极提供相应选择的总电流比例。 一个或多个切口扩散器或室扩散器可以扩散处理气体或等离子体调节气体。 可以使用各种手段来控制等离子体阻抗和分布。

公开(公告)号：US20230420221A1

公开(公告)日：2023-12-28

申请号：US18335509

申请日：2023-06-15

申请人： DISCO CORPORATION

发明人： Yu ZHAO

IPC分类号： H01J37/32 ,  H01L21/78 ,  H01L21/3065

CPC分类号： H01J37/32394 ,  H01L21/78 ,  H01L21/3065 ,  H01J2237/334

摘要： A wafer has a substrate and a functional layer disposed on the substrate along a plurality of projected dicing lines. A method of processing the wafer includes applying a laser beam to the wafer along the projected dicing lines to remove portions of the functional layer, forming processed grooves in the functional layer through which the substrate is exposed, removing damaged regions produced in an interface between the substrate and the functional layer by the laser beam, and forming recesses extending outwardly from side surfaces of the processed grooves, a recess exposing step of removing portions of the functional layer that overhang the recesses, thereby exposing the recesses, and processing the substrate along the projected dicing line after the recess exposing step has been carried out.

公开(公告)号：US11697132B2

公开(公告)日：2023-07-11

申请号：US16854498

申请日：2020-04-21

申请人： Schott AG

发明人： Matthias Bicker ,  Manfred Lohmeyer ,  Hartmut Bauch

IPC分类号： B05D3/14 ,  C03C17/28 ,  H01J37/32 ,  B05D1/00 ,  B05D7/22 ,  C03C17/00 ,  A61M5/31

CPC分类号： B05D3/147 ,  A61M5/3129 ,  B05D1/62 ,  B05D7/22 ,  C03C17/004 ,  C03C17/28 ,  H01J37/32394 ,  A61M2005/3131 ,  B05D2201/00 ,  B05D2203/35 ,  B05D2259/00

摘要： An apparatus and to a method for treating layers using a plasma zone sealed from the outer atmospheric pressure are provided. The apparatus and method include a plasma reactor including a substrate carrier in form of a container receiving means, and a closing element that is joined with the substrate carrier by means of a lifting device.

公开(公告)号：US20180277339A1

公开(公告)日：2018-09-27

申请号：US15922215

申请日：2018-03-15

申请人： TOKYO ELECTRON LIMITED

发明人： Kazushi KANEKO ,  Yohei ISHIDA ,  Hajime TAMURA

IPC分类号： H01J37/32 ,  C23C16/511

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/3222 ,  H01J37/32394 ,  H01J37/32577

摘要： A microwave generator of a plasma processing apparatus of an embodiment includes a first module, a second module, and a combiner. The first module includes a distributor which distributes a high-frequency electric signal, and outputs a plurality of high-frequency electric signals. A plurality of amplifier modules of the second module respectively amplify the plurality of high-frequency electric signals from the first module to output a plurality of microwaves. The combiner combines the plurality of microwaves from the plurality of amplifier modules to output a microwave. Each of the plurality of amplifier modules has a DC/DC converter and an amplifier. The DC/DC converter steps down the voltage of a first direct-current power from an external direct-current power supply to output a second direct-current power. The amplifier amplifies a high-frequency electric signal by using the second direct-current power to output a microwave.

公开(公告)号：US20170040144A1

公开(公告)日：2017-02-09

申请号：US14688363

申请日：2015-04-16

申请人： Svetozar Popovic ,  JANARDAN UPADHYAY ,  LEPOSAVA VUSKOVIC ,  H. Lawrence Phillips ,  ANNE-MARIE VALENTE-FELICIANO

发明人： Svetozar Popovic ,  JANARDAN UPADHYAY ,  LEPOSAVA VUSKOVIC ,  H. Lawrence Phillips ,  ANNE-MARIE VALENTE-FELICIANO

IPC分类号： H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01J37/32394 ,  H01J37/32403 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32816 ,  H01J2237/334

摘要： A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.

摘要翻译： 用于对三维结构内的表面进行有效等离子体蚀刻的方法可以包括将内部电极定位在腔室内; 排空腔室; 向腔室内加入第一惰性气体; 调节室内的压力; 沿室腔的内壁产生等离子体护套; 调整内部电极上的正偏压以建立有效的等离子体鞘电压; 向腔室内加入第一电负性气体; 可选地重新调整内部电极上的正的直流偏压重新建立腔室上的有效等离子体鞘电压; 蚀刻室腔的内壁; 并将内壁抛光至所需的表面粗糙度。