公开(公告)号：US20220254990A1

公开(公告)日：2022-08-11

申请号：US17488592

申请日：2021-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyounghun Ryu ,  Shin Kwon ,  Byoungjae Bae ,  Hyunchul Shin ,  Gawon Lee

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A semiconductor device includes a substrate including a first region and a second region, data storage patterns on the first region and spaced apart from each other in a first direction, an upper insulating layer on the first and second regions and on the data storage patterns , a cell line structure penetrating the upper insulating layer on the first region, extending in the first direction, and electrically connected to the data storage patterns, and an upper connection structure penetrating the upper insulating layer on the second region. The upper connection structure includes an upper conductive line, and upper conductive contacts arranged along a bottom surface of the upper conductive line. The bottom surface of the upper conductive line is located at a height higher than a bottom surface of the cell line structure. A side surface of the cell line structure has a straight line shape continuously-extended.